公开(公告)号：US06649495B2

公开(公告)日：2003-11-18

申请号：US10164709

申请日：2002-06-10

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

IPC分类号： H01L2120

CPC分类号： H01L21/76834 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76807 ,  H01L2221/1036

摘要： The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film 35a on a substrate 21 subject to deposition, in which an electric power having a first frequency (f1) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film 35b having low relative dielectric constant on the barrier insulating film 35a, in which an electric power having a second frequency (f2) higher than the first frequency (f1) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction.

摘要翻译： 半导体器件的制造方法技术领域本发明涉及一种半导体器件的制造方法，其中，在主要由铜膜构成的布线被涂覆的同时依次形成具有低相对介电常数的阻挡绝缘膜和主绝缘膜。 其结构包括以下步骤：在沉积的基板21上形成阻挡绝缘膜35a，其中具有第一频率（f1）的电力施加到至少含有含硅气体和氧气的第一成膜气体 以将所述第一成膜气体转化为等离子体并引起反应; 并且在隔离绝缘膜35a上形成具有低相对介电常数的主绝缘膜35b，其中具有比第一频率（f1）高的第二频率（f2）的电力施加到至少包含至少 含硅气体和含氧气体，以将第二成膜气体转化为等离子体并引起反应。

公开(公告)号：US06780790B2

公开(公告)日：2004-08-24

申请号：US10287549

申请日：2002-11-05

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Kazuo Maeda

IPC分类号： H01L21469

CPC分类号： H01L21/02126 ,  C23C16/308 ,  C23C16/401 ,  C23C16/455 ,  C23C16/45557 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/31633 ,  H01L21/76828 ,  H01L21/76834

摘要： A semiconductor device having a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method includes supplying high frequency power of a frequency of 1 MHz or more to a first electrode, and holding a substrate on which copper wiring is formed on a second electrode facing the first electrode; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes while regulating gas pressure of the film forming gas to 1 Torr or less; and supplying high frequency power to either of the first and second electrodes to convert the film forming gas into a plasma, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react to form a barrier insulating film covering the surface of the substrate.

摘要翻译： 通过等离子体增强CVD法形成具有覆盖铜布线的阻挡绝缘膜的半导体器件。 该方法包括向第一电极提供1MHz或更高频率的高频功率，并且在面向第一电极的第二电极上保持在其上形成有铜布线的基板; 在第一和第二电极之间提供含有烷基化合物和含氧气体的成膜气体，同时将成膜气体的气体压力调节至1托或更小; 并向第一和第二电极中的任一个提供高频电力，以将成膜气体转化为等离子体，并使成膜气体的烷基化合物和含氧气体反应，形成覆盖表面的阻挡绝缘膜 的基底。

公开(公告)号：US06713383B2

公开(公告)日：2004-03-30

申请号：US10207015

申请日：2002-07-30

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Shoji Ohgawara ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Shoji Ohgawara ,  Kazuo Maeda

IPC分类号： H01L214763

CPC分类号： H01L21/76838 ,  H01L21/318 ,  H01L21/321 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF4 gas, a C2F6 gas and a NF3 gas. The surface of the copper (Cu) wiring layer is then exposed to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a fÀ-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (CxHy), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (CxHy), and a Cu diffusion preventing insulating film is formed on the copper (Cu) wiring layer.

摘要翻译： 形成在半导体衬底上的铜（Cu）布线层的表面暴露于选自氨气，氮和氢的混合气体，CF4气体，C2F6气体和NF3气体中的等离子体气体 。 然后将铜（Cu）布线层的表面暴露于选自氨气，乙二胺气体，二 - 二酮气体，由氨气组成的混合气体的气体的气氛或等离子体 和烃气体（CxHy）以及由氮气和烃气体组成的混合气体（CxHy），在铜（Cu）配线层上形成Cu扩散防止绝缘膜。

公开(公告)号：US07329612B2

公开(公告)日：2008-02-12

申请号：US10530730

申请日：2003-10-20

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L23/53295 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.

摘要翻译： 通过以下步骤制造半导体器件：通过将H 2 O 2的流量比设定为具有硅氧烷键的含硅有机化合物和含硅的有机化合物中的任何一种来生成成膜气体 具有CH 3 3〜4以上的有机化合物，将气体压力调节至1.5Torr以上，向成膜气体施加电力，生成等离子体，使其反应， 在基板（61）上形成低介电绝缘膜（62），使包含He，Ar，H 2或氘中的至少任何一种的工艺气体均质化，并使低介电绝缘层 膜（62）与工艺气体的等离子体接触。

公开(公告)号：US20060099725A1

公开(公告)日：2006-05-11

申请号：US10530730

申请日：2003-10-20

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

IPC分类号： H01L21/00

CPC分类号： H01L23/53295 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.

摘要翻译： 通过以下步骤制造半导体器件：通过将H 2 O 2的流量比设定为具有硅氧烷键的含硅有机化合物和含硅的有机化合物中的任何一种来生成成膜气体 具有CH 3 3〜4以上的有机化合物，将气体压力调节至1.5Torr以上，向成膜气体施加电力，生成等离子体，使其反应， 在基板（61）上形成低介电绝缘膜（62），使包含He，Ar，H 2或氘中的至少任何一种的工艺气体均质化，并使低介电绝缘层 膜（62）与工艺气体的等离子体接触。

公开(公告)号：US06815824B2

公开(公告)日：2004-11-09

申请号：US10176588

申请日：2002-06-24

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura

IPC分类号： H01L23485

CPC分类号： H01L21/76832 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.

公开(公告)号：US5620523A

公开(公告)日：1997-04-15

申请号：US389791

申请日：1995-02-16

申请人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

发明人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32449 ,  H01J37/3211 ,  H01J37/3244

摘要： This invention relates to film-forming apparatus for forming an insulating film, for example, by the CVD method using an activated reaction gas. It is aimed at simplifying the apparatus, ensuring high film quality, enhancing the efficiency of formation of a plasma, and improving the uniformity of thickness of the produced film. The film-forming apparatus includes a plasma generator and a first gas discharger for discharging a first reaction gas into the plasma generator and a second gas discharger for discharging a second reaction gas onto a substrate. The second gas discharger includes a plurality of gas discharge pipes, in each of which a plurality of gas discharge holes are formed, whereby the second reaction gas is discharged from the gas discharge holes into contact with the activated first reaction gas and is itself activated so that a film is formed on the substrate through reaction of first and second reaction gases.

摘要翻译： 本发明涉及用于形成绝缘膜的成膜装置，例如通过使用活性反应气体的CVD法。 旨在简化设备，确保高质量的膜，提高等离子体的形成效率，并提高所制膜的厚度均匀性。 成膜装置包括等离子体发生器和用于将第一反应气体排放到等离子体发生器中的第一气体放出器和用于将第二反应气体排放到基板上的第二气体放出器。 第二气体排出器包括多个气体排出管，其中形成有多个气体排出孔，由此第二反应气体从气体排出孔排出到与活化的第一反应气体接触，并且自身被激活 通过第一和第二反应气体的反应在基板上形成膜。

公开(公告)号：US5314538A

公开(公告)日：1994-05-24

申请号：US958105

申请日：1992-12-22

申请人： Kazuo Maeda ,  Noboru Tokumasu ,  Yuhko Nishimoto

发明人： Kazuo Maeda ,  Noboru Tokumasu ,  Yuhko Nishimoto

IPC分类号： H01L21/205 ,  C23C16/48 ,  C23C16/54 ,  C23C16/56 ,  H01L21/00 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/324 ,  H01L21/677 ,  H01L21/683 ,  H01L21/768 ,  C23C16/00

CPC分类号： H01L21/67167 ,  C23C16/481 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31625 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67207 ,  H01L21/76819 ,  Y10S414/135 ,  Y10S414/141 ,  Y10T29/41

摘要： An apparatus and method for manufacturing a semiconductor device capable of forming a single layer film or a multilayer film of improved quality by continuously processing without exposure of the wafer to the ambient air. The apparatus includes a film forming section having a gas dispersion unit for supplying reaction gas, a processing section for processing the formed film and a wafer holder for holding a wafer facing the gas dispersion unit or the processing section. The wafer holder moves the wafer between the film forming section and the processing section while heating the wafer by a heating element contained therein.

摘要翻译： PCT No.PCT / JP92 / 00468 Sec。 371日期1992年12月22日 102（e）1992年12月22日的PCT日期1992年4月14日PCT。一种制造半导体器件的装置和方法，该半导体器件能够通过在不暴露晶片的情况下连续加工来形成质量提高的单层膜或多层膜 环境空气。 该装置包括具有用于供应反应气体的气体分散单元的膜形成部分，用于处理所形成的膜的处理部分和用于保持面向气体分散单元或处理部分的晶片的晶片保持器。 晶片保持器在成膜部分和处理部分之间移动晶片，同时通过其中包含的加热元件加热晶片。

公开(公告)号：US5858100A

公开(公告)日：1999-01-12

申请号：US416006

申请日：1995-04-04

申请人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

发明人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

IPC分类号： C30B25/12 ,  C23C16/458 ,  C23C16/507 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  C23C16/507

摘要： The present invention relates to a reaction apparatus for receiving a reaction gas and for heating a substrate so as to form a film such as an insulating film on the substrate or for etching, with reduced power consumption for heating the substrate. The apparatus can change a substrate temperature within a short period of time, and maintains throughput while reducing labor and cost for maintenance. The apparatus includes a substrate holder (12) with a base of an insulating material in which an electrode (22) and a heater (23) for heating the held substrate (20) are contained. The apparatus also includes a processing chamber (7) enclosed by a chamber wall (7a).

摘要翻译： 本发明涉及一种反应装置，用于接收反应气体并加热基板，以便在基板上形成诸如绝缘膜的膜或用于蚀刻，同时降低了用于加热基板的功率消耗。 该装置可以在短时间内改变基板温度，并且在减少维护的劳动力和成本的同时保持生产量。 该装置包括具有绝缘材料的基部的基板保持件（12），其中包含用于加热保持的基板（20）的电极（22）和加热器（23）。 该装置还包括由室壁（7a）包围的处理室（7）。

公开(公告)号：US06352943B2

公开(公告)日：2002-03-05

申请号：US09157936

申请日：1998-09-22

申请人： Kazuo Maeda ,  Yuhko Nishimoto

发明人： Kazuo Maeda ,  Yuhko Nishimoto

IPC分类号： H01L2131

CPC分类号： H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76229

摘要： This invention relates to a method of film formation in which, when a silicon oxide film (a NSG film: a Non-doped Silicate Glass) is formed on a substrate having a recess by a CVD method using a mixed gas containing TEOS and ozone, surface dependency on the substrate is eliminated to embed a silicon oxide film into the recess of the surface. The invention includes forming a phosphorus containing insulating film as a base layer on the surface of a substrate and forming a silicon-containing insulating film on the phosphosilicate glass film by the chemical vapor deposition method, using a mixture of a ozone-containing gas and a silicon-containing gas.

摘要翻译： 本发明涉及一种成膜方法，其中当使用含有TEOS和臭氧的混合气体通过CVD法在具有凹陷的衬底上形成氧化硅膜（NSG膜：非掺杂硅酸盐玻璃）时， 消除了对衬底的表面依赖性，以将氧化硅膜嵌入到表面的凹部中。 本发明包括在基材表面上形成含磷绝缘膜作为基底层，并通过化学气相沉积法在磷硅玻璃膜上形成含硅绝缘膜，使用含臭氧的气体和 含硅气体。