- 专利标题: Method and apparatus to clamp SRAM supply voltage
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申请号: US11320789申请日: 2005-12-30
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公开(公告)号: US20060104128A1公开(公告)日: 2006-05-18
- 发明人: Dinesh Somasekhar , Muhammad Khellah , Yibin Ye , Vivek De , James Tschanz , Stephen Tang
- 申请人: Dinesh Somasekhar , Muhammad Khellah , Yibin Ye , Vivek De , James Tschanz , Stephen Tang
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 主分类号: G11C7/10
- IPC分类号: G11C7/10
摘要:
An apparatus and method are provided for limiting a drop of a supply voltage in an SRAM device to retain the state of the memory during an IDLE state. The apparatus may include a memory array, a sleep device, and a clamping circuit. The clamping circuit may be configured to activate the sleep device when a voltage drop across the memory array falls below a preset voltage and the memory array is in an IDLE state.
公开/授权文献
- US07342845B2 Method and apparatus to clamp SRAM supply voltage 公开/授权日:2008-03-11
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