发明申请
- 专利标题： Storage electrode of a capacitor and a method of forming the same
- 专利标题（中）： 电容器的存储电极及其形成方法
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申请号： US11291798申请日： 2005-11-30
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公开(公告)号： US20060113575A1公开(公告)日： 2006-06-01
- 发明人: Won-Jun Jang , In-Sun Park , Jae-Young Park , Ki-Vin Im , Yong-Woo Hyung
- 申请人： Won-Jun Jang , In-Sun Park , Jae-Young Park , Ki-Vin Im , Yong-Woo Hyung
- 优先权： KR2004-99688 20041201
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
In an embodiment, a storage electrode of a capacitor in a semiconductor device is resistant to inadvertent etching during its manufacturing processes. A method of forming the storage electrode of the capacitor is described. The storage electrode of the capacitor may include a first metal layer electrically connected with a source region of a transistor through a contact plug penetrating an insulating layer on a semiconductor substrate. A polysilicon layer may then be formed on the first metal layer. A second metal layer is formed on the polysilicon layer.
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