Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).