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发明申请
US20060131554A1 Nonvolatile memory device having two or more resistance elements and methods of forming and using the same 有权
具有两个或多个电阻元件的非易失性存储器件及其形成和使用方法

Nonvolatile memory device having two or more resistance elements and methods of forming and using the same
摘要：
A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold switching characteristics. The nonvolatile semiconductor memory device may include a lower electrode; a first resistance layer having at least two resistance characteristics formed on the lower electrode, a second resistance layer having threshold switching characteristics formed on the first resistance layer, and an upper electrode formed on the second resistance layer.
摘要（中）：

具有两个或多个电阻器的非易失性存储器件及其形成和使用方法。 具有两个电阻层的非易失性存储器件，更具体地说，涉及使用具有存储器开关特性的电阻层和具有阈值转换特性的电阻层形成和操作的非易失性存储器件。 非易失性半导体存储器件可以包括下电极; 具有形成在所述下电极上的至少两个电阻特性的第一电阻层，形成在所述第一电阻层上的阈值转换特性的第二电阻层和形成在所述第二电阻层上的上电极。

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