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1.发明授权Nonvolatile memory device having two or more resistance elements and methods of forming and using the same 有权具有两个或多个电阻元件的非易失性存储器件及其形成和使用方法公开(公告)号：US07400027B2
公开(公告)日：2008-07-15
申请号：US11312744
申请日：2005-12-21
申请人： Young-Soo Joung , Yoon-Dong Park , In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , Hye-Young Kim , Seung-Eon Ahn , David Seo
发明人： Young-Soo Joung , Yoon-Dong Park , In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , Hye-Young Kim , Seung-Eon Ahn , David Seo
IPC分类号： H01L23/62
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/76 , G11C2213/77 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold switching characteristics. The nonvolatile semiconductor memory device may include a lower electrode; a first resistance layer having at least two resistance characteristics formed on the lower electrode, a second resistance layer having threshold switching characteristics formed on the first resistance layer, and an upper electrode formed on the second resistance layer.
摘要翻译： 具有两个或多个电阻器的非易失性存储器件及其形成和使用方法。 具有两个电阻层的非易失性存储器件，更具体地说，涉及使用具有存储器开关特性的电阻层和具有阈值转换特性的电阻层形成和操作的非易失性存储器件。 非易失性半导体存储器件可以包括下电极; 具有形成在所述下电极上的至少两个电阻特性的第一电阻层，形成在所述第一电阻层上的阈值转换特性的第二电阻层和形成在所述第二电阻层上的上电极。
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2.发明申请Nonvolatile memory device having two or more resistance elements and methods of forming and using the same 有权具有两个或多个电阻元件的非易失性存储器件及其形成和使用方法公开(公告)号：US20060131554A1
公开(公告)日：2006-06-22
申请号：US11312744
申请日：2005-12-21
申请人： Young-Soo Joung , Yoon-Dong Park , In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , Hye-Young Kim , Seung-Eon Ahn , David Seo
发明人： Young-Soo Joung , Yoon-Dong Park , In-Kyeong Yoo , Myoung-Jae Lee , Sun-Ae Seo , Hye-Young Kim , Seung-Eon Ahn , David Seo
IPC分类号： H01L29/02
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/76 , G11C2213/77 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold switching characteristics. The nonvolatile semiconductor memory device may include a lower electrode; a first resistance layer having at least two resistance characteristics formed on the lower electrode, a second resistance layer having threshold switching characteristics formed on the first resistance layer, and an upper electrode formed on the second resistance layer.
摘要翻译： 具有两个或多个电阻器的非易失性存储器件及其形成和使用方法。 具有两个电阻层的非易失性存储器件，更具体地说，涉及使用具有存储器开关特性的电阻层和具有阈值转换特性的电阻层形成和操作的非易失性存储器件。 非易失性半导体存储器件可以包括下电极; 具有形成在所述下电极上的至少两个电阻特性的第一电阻层，形成在所述第一电阻层上的阈值转换特性的第二电阻层和形成在所述第二电阻层上的上电极。
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3.发明申请Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same 有权非易失性存储器件，非易失性存储器件阵列及其制造方法公开(公告)号：US20080121865A1
公开(公告)日：2008-05-29
申请号：US11979432
申请日：2007-11-02
申请人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
发明人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C2213/72 , G11C2213/73 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory device as described above. Methods of manufacturing a nonvolatile memory device and an array of nonvolatile memory device
摘要翻译： 一种非易失性存储器件，包括下电极，设置在下电极上的电阻结构，设置在电阻结构上的中间电极，设置在中间电极上的二极管结构，以及设置在二极管结构上的上电极。 一种非易失性存储器件，其中电阻器结构包括一个电阻器，二极管结构包括一个二极管。 如上所述的非易失性存储器件阵列。 非易失性存储装置的制造方法以及非易失性存储装置的阵列
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4.发明授权Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same 有权非易失性存储器件，非易失性存储器件阵列及其制造方法公开(公告)号：US07935953B2
公开(公告)日：2011-05-03
申请号：US11979432
申请日：2007-11-02
申请人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
发明人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
CPC分类号： G11C13/0007 , G11C2213/72 , G11C2213/73 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory device as described above. Methods of manufacturing a nonvolatile memory device and an array of nonvolatile memory device.
摘要翻译： 一种非易失性存储器件，包括下电极，设置在下电极上的电阻结构，设置在电阻结构上的中间电极，设置在中间电极上的二极管结构，以及设置在二极管结构上的上电极。 一种非易失性存储器件，其中电阻器结构包括一个电阻器，二极管结构包括一个二极管。 如上所述的非易失性存储器件阵列。 非易失性存储装置的制造方法以及非易失性存储装置的阵列。
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5.发明授权Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same 有权非易失性存储器件，非易失性存储器件阵列及其制造方法公开(公告)号：US07602042B2
公开(公告)日：2009-10-13
申请号：US11270459
申请日：2005-11-10
申请人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
发明人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
IPC分类号： H01L23/62
CPC分类号： G11C13/0007 , G11C2213/72 , G11C2213/73 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.
摘要翻译： 一种非易失性存储器件，包括下电极，设置在下电极上的电阻器结构，设置在电阻器结构上的二极管结构，以及设置在二极管结构上的上电极。 一种非易失性存储器件，其中电阻器结构包括一个电阻器，二极管结构包括一个二极管。 如上所述的非易失性存储器件阵列。
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6.发明申请公开(公告)号：US20060098472A1
公开(公告)日：2006-05-11
申请号：US11270459
申请日：2005-11-10
申请人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
发明人： Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
IPC分类号： G11C11/22
CPC分类号： G11C13/0007 , G11C2213/72 , G11C2213/73 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.
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7.发明授权公开(公告)号：US08350262B2
公开(公告)日：2013-01-08
申请号：US12929121
申请日：2011-01-03
申请人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
发明人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
CPC分类号： H01L27/1021 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/73
摘要： A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.
摘要翻译： 可以提供具有自身存在二极管特性的非易失性存储器件和/或包括非易失性存储器件的非易失性存储器阵列。 非易失性存储器件可以包括下电极，下电极上的第一半导体氧化物层，第一半导体氧化物层上的第二半导体氧化物层，和/或第二半导体氧化物层上的上电极。
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8.发明申请MULTI-STATE RESISTIVE MEMORY ELEMENT, MULTI-BIT RESISTIVE MEMORY CELL, OPERATING METHOD THEREOF, AND DATA PROCESSING SYSTEM USING THE MEMORY ELEMENT 有权多状态电阻记忆元件，多位电阻记忆体，其操作方法和使用存储单元的数据处理系统公开(公告)号：US20070159869A1
公开(公告)日：2007-07-12
申请号：US11619522
申请日：2007-01-03
申请人： In-Gyu Baek , Dong-Chul Kim , Jang-Eun Lee , Myoung-Jae Lee , Sun-Ae Seo , Hyeong-Jun Kim , Seung-Eon Ahn , Eun-Kyung Yim
发明人： In-Gyu Baek , Dong-Chul Kim , Jang-Eun Lee , Myoung-Jae Lee , Sun-Ae Seo , Hyeong-Jun Kim , Seung-Eon Ahn , Eun-Kyung Yim
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0078 , G11C2213/32
摘要： A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive states by applying a corresponding current to the memory element.
摘要翻译： 多比特存储单元存储对应于低电阻状态的高电阻状态和多个其他电阻状态的信息。 多位存储单元中的存储元件的电阻通过将相应的电流施加到存储元件而从高电阻状态切换到其它多个电阻状态之一。
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9.发明申请公开(公告)号：US20110095287A1
公开(公告)日：2011-04-28
申请号：US12929121
申请日：2011-01-03
申请人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
发明人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
IPC分类号： H01L29/12
CPC分类号： H01L27/1021 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/73
摘要： A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.
摘要翻译： 可以提供具有自身存在二极管特性的非易失性存储器件和/或包括非易失性存储器件的非易失性存储器阵列。 非易失性存储器件可以包括下电极，下电极上的第一半导体氧化物层，第一半导体氧化物层上的第二半导体氧化物层，和/或第二半导体氧化物层上的上电极。
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10.发明申请公开(公告)号：US20070205456A1
公开(公告)日：2007-09-06
申请号：US11711616
申请日：2007-02-28
申请人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
发明人： Myoung-Jae Lee , In-Kyeong Yoo , Eun-Hong Lee , Jong-Wan Kim , Dong-Chul Kim , Seung-Eon Ahn
IPC分类号： H01L29/76
CPC分类号： H01L27/1021 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/73
摘要： A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.
摘要翻译： 可以提供具有自身存在二极管特性的非易失性存储器件和/或包括非易失性存储器件的非易失性存储器阵列。 非易失性存储器件可以包括下电极，下电极上的第一半导体氧化物层，第一半导体氧化物层上的第二半导体氧化物层，和/或第二半导体氧化物层上的上电极。
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