发明申请
US20060141386A1 Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
有权
化学扩增用于厚膜，厚膜光致抗蚀剂层压产品的正性光致抗蚀剂组合物，厚膜抗蚀剂图案的制造方法和连接端子的制造方法
- 专利标题： Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
- 专利标题（中）： 化学扩增用于厚膜，厚膜光致抗蚀剂层压产品的正性光致抗蚀剂组合物，厚膜抗蚀剂图案的制造方法和连接端子的制造方法
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申请号： US11025589申请日： 2004-12-29
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公开(公告)号： US20060141386A1公开(公告)日： 2006-06-29
- 发明人: Toshiki Okui , Koichi Misumi , Koji Saito
- 申请人： Toshiki Okui , Koichi Misumi , Koji Saito
- 主分类号： G03C1/76
- IPC分类号： G03C1/76
摘要：
A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.
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