公开(公告)号：US20060141386A1

公开(公告)日：2006-06-29

申请号：US11025589

申请日：2004-12-29

申请人： Toshiki Okui ,  Koichi Misumi ,  Koji Saito

发明人： Toshiki Okui ,  Koichi Misumi ,  Koji Saito

IPC分类号： G03C1/76

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10T428/265 ,  Y10T428/269

摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

摘要翻译： 一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在载体上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，其包含（A）在活性光照射下产生酸的化合物或 辐射，（B）在酸的作用下显示增加的碱溶性的树脂，和（C）碱溶性树脂，其中组分（B）包含由含有结构单元（b1）的共聚物形成的树脂， 具体结构。

公开(公告)号：US07169532B2

公开(公告)日：2007-01-30

申请号：US11025589

申请日：2004-12-29

申请人： Toshiki Okui ,  Koichi Misumi ,  Koji Saito

发明人： Toshiki Okui ,  Koichi Misumi ,  Koji Saito

IPC分类号： G03F7/004 ,  G11B5/64 ,  B32B17/10

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10T428/265 ,  Y10T428/269

摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

摘要翻译： 一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在载体上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，其包含（A）在活性光照射下产生酸的化合物或 辐射，（B）在酸的作用下显示增加的碱溶性的树脂，和（C）碱溶性树脂，其中组分（B）包含由含有结构单元（b1）的共聚物形成的树脂， 具体结构。

公开(公告)号：US09436084B2

公开(公告)日：2016-09-06

申请号：US11792752

申请日：2006-03-22

申请人： Koichi Misumi ,  Toshiki Okui

发明人： Koichi Misumi ,  Toshiki Okui

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  C08F220/18 ,  C07D251/02

CPC分类号： G03F7/0397 ,  C07D251/02 ,  C08F220/18 ,  G03F7/004 ,  G03F7/0392 ,  H01L21/0274

摘要： The invention provides a chemical-amplification positive-working photoresist composition suitable for forming a resist film of a relatively large thickness on a substrate in addition to other advantages. The inventive composition contains (A) a photoacid-generating agent, (B) an alkali-insoluble resin capable of being imparted with increased alkali-solubility by interaction with an acid, (C) an alkali-soluble resin and (D) an organic solvent, wherein the component (C) is (C1) a polyhydroxystyrene or a copolymer having at least 80% by mass of the hydroxystyrene units in an amount not exceeding 15 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C).

摘要翻译： 本发明提供了除了其它优点之外，还适用于在基片上形成厚度相对较大的抗蚀剂膜的化学放大正性光致抗蚀剂组合物。 本发明的组合物含有（A）光致酸产生剂，（B）能够通过与酸相互作用而赋予碱溶性增加的碱不溶性树脂，（C）碱溶性树脂和（D）有机 溶剂，其中组分（C）为（C1）聚羟基苯乙烯或共聚物，相对于100质量份的组分的总量，相对于100质量份，羟基苯乙烯单元的至少80质量％的量不超过15质量份 （B）和（C）。

公开(公告)号：US20060141388A1

公开(公告)日：2006-06-29

申请号：US11025833

申请日：2004-12-29

申请人： Toshiki Okui ,  Koichi Misumi

发明人： Toshiki Okui ,  Koichi Misumi

IPC分类号： G03C1/76

CPC分类号： G03F7/0397

摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) comprises a resin containing a structural unit (b1) with a specific structure, and another resin containing a structural unit (b2) with a specific structure.

摘要翻译： 一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在载体上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，包括（A）在用活性光照射时产生酸的化合物或 （B）包含具有特定结构的结构单元（b1）的树脂和含有结构单元（b2）的树脂，（B）含有结构单元（b2）的树脂， 具体结构。

公开(公告)号：US07927778B2

公开(公告)日：2011-04-19

申请号：US11025833

申请日：2004-12-29

申请人： Toshiki Okui ,  Koichi Misumi

发明人： Toshiki Okui ,  Koichi Misumi

IPC分类号： G03C1/00 ,  G03F7/00

CPC分类号： G03F7/0397

摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) comprises a resin containing a structural unit (b1) with a specific structure, and another resin containing a structural unit (b2) with a specific structure.

摘要翻译： 一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在载体上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，包括（A）在活性光照射时产生酸的化合物或 （B）包含具有特定结构的结构单元（b1）的树脂和含有结构单元（b2）的树脂，（B）含有结构单元（b2）的树脂， 具体结构。

公开(公告)号：US20060141387A1

公开(公告)日：2006-06-29

申请号：US11025591

申请日：2004-12-29

申请人： Toshiki Okui ,  Koichi Misumi

发明人： Toshiki Okui ,  Koichi Misumi

IPC分类号： G03C1/76

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397

摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

公开(公告)号：US07951522B2

公开(公告)日：2011-05-31

申请号：US11025591

申请日：2004-12-29

申请人： Toshiki Okui ,  Koichi Misumi

发明人： Toshiki Okui ,  Koichi Misumi

IPC分类号： G03C1/00 ,  G03F7/00

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397

摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

摘要翻译： 一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在支撑体顶部上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，其包含（A）在活性光照射下产生酸的化合物或 辐射，（B）在酸的作用下显示增加的碱溶性的树脂，和（C）碱溶性树脂，其中组分（B）包含由含有结构单元（b1）的共聚物形成的树脂， 具体结构。

公开(公告)号：US07081327B2

公开(公告)日：2006-07-25

申请号：US11025870

申请日：2004-12-29

申请人： Toshiki Okui ,  Koichi Misumi

发明人： Toshiki Okui ,  Koichi Misumi

IPC分类号： G03C1/73 ,  G03C1/76 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC分类号： G03F7/0397 ,  Y10S430/111

摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) includes a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

摘要翻译： 一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在载体上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，包括（A）在用活性光照射时产生酸的化合物或 辐射，（B）在酸的作用下显示增加的碱溶性的树脂，其中组分（B）包括由含有具体结构的结构单元（b1）的共聚物形成的树脂。

公开(公告)号：US20060141389A1

公开(公告)日：2006-06-29

申请号：US11025870

申请日：2004-12-29

申请人： Toshiki Okui ,  Koichi Misumi

发明人： Toshiki Okui ,  Koichi Misumi

IPC分类号： G03C1/76

CPC分类号： G03F7/0397 ,  Y10S430/111

摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) includes a resin formed from a copolymer containing a structural unit (b1) with a specific structure.

摘要翻译： 一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在载体上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，包括（A）在用活性光照射时产生酸的化合物或 辐射，（B）在酸的作用下显示增加的碱溶性的树脂，其中组分（B）包括由含有具体结构的结构单元（b1）的共聚物形成的树脂。

公开(公告)号：US20060035170A1

公开(公告)日：2006-02-16

申请号：US11258274

申请日：2005-10-26

申请人： Koji Saito ,  Kouichi Misumi ,  Toshiki Okui ,  Hiroshi Komano

发明人： Koji Saito ,  Kouichi Misumi ,  Toshiki Okui ,  Hiroshi Komano

IPC分类号： G03C1/76

CPC分类号： G03F7/038 ,  G03F7/0045 ,  G03F7/0382 ,  Y10S430/111 ,  Y10S430/113

摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.