发明申请
- 专利标题: Field effect transistor and method of manufacturing the same
- 专利标题(中): 场效应晶体管及其制造方法
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申请号: US10545398申请日: 2004-08-17
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公开(公告)号: US20060145141A1公开(公告)日: 2006-07-06
- 发明人: Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota
- 申请人: Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 优先权: JP2003-305487 20030828
- 国际申请: PCT/JP04/12044 WO 20040817
- 主分类号: H01L29/08
- IPC分类号: H01L29/08 ; H01L35/24 ; H01L51/00
摘要:
Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.80°±0.20°, and 16.90°±0.20°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)