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    Field effect transistor and method of producing the same
    4.
    发明授权
    Field effect transistor and method of producing the same 有权
    场效应晶体管及其制造方法

    公开(公告)号：US07960716B2

    公开(公告)日：2011-06-14

    申请号：US10571688

    申请日：2005-03-08

    申请人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota ,  Akane Masumoto ,  Satomi Sugiyama

    发明人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota ,  Akane Masumoto ,  Satomi Sugiyama

    IPC分类号： H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/0077 ,  C07D487/22 ,  H01L51/0003 ,  H01L51/0525 ,  H01L51/0545

    摘要： An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.

    摘要翻译： 本发明的目的是提供一种场效应晶体管，其表现出高场效应迁移率和高ON / OFF比，其可以简单地通过使用具有优异结晶性和取向性的卟啉化合物来制备。 根据本发明晶体管的场效应晶体管至少含有有机半导体层，其中有机半导体层至少含有卟啉化合物，并且在9.9°至10.4的布拉格角（2θ）范围内具有最大衍射强度I1 °，在使用CuKα辐射的X射线衍射中的布拉格角（2θ）范围内的最大衍射强度I2强于23.0°至26.0°。

    FIELD EFFECT TRANSISTOR AND METHOD OF PRODUCING SAME
    5.
    发明申请
    FIELD EFFECT TRANSISTOR AND METHOD OF PRODUCING SAME 有权
    场效应晶体管及其生产方法

    公开(公告)号：US20090263933A1

    公开(公告)日：2009-10-22

    申请号：US12493052

    申请日：2009-06-26

    申请人： Akane Masumoto ,  Daisuke Miura ,  Tomonari Nakayama

    发明人： Akane Masumoto ,  Daisuke Miura ,  Tomonari Nakayama

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0516 ,  H01L51/001 ,  H01L51/0077

    摘要： A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.

    摘要翻译： 提供了一种场效应晶体管，其包括有机半导体层，该有机半导体层包含具有由通式（1）表示的单苯并卟啉骨架的化合物：其中R 1和R 2独立地选自氢原子，卤原子，羟基 基团和烷基，烯基，氧烷基，硫代烷基，烷基酯和芳基各自具有1至12个碳原子，条件是相邻的R 1可以相同或不同且相邻的R 2可以相同或不同，并且至少两个 R2不是氢原子; R3是氢原子或芳基; M表示2个氢原子，金属原子或金属氧化物。

    ORGANIC SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, AND THEIR MANUFACTURING METHODS
    6.
    发明申请
    ORGANIC SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, AND THEIR MANUFACTURING METHODS 有权
    有机半导体器件，场效应晶体管及其制造方法

    公开(公告)号：US20090186490A1

    公开(公告)日：2009-07-23

    申请号：US12410215

    申请日：2009-03-24

    申请人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Daisuke Miura

    发明人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Daisuke Miura

    IPC分类号： H01L21/312

    CPC分类号： H01L51/052 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.

    摘要翻译： 提供一种包括有机半导体层和绝缘层的有机半导体器件。 绝缘层由由包含树脂和交联剂的组合物形成的固化材料制成。 树脂含有具有羟基的有机树脂。 交联剂含有具有至少两个交联基团的化合物。 至少一个交联基团是羟甲基或NH基。 该组合物相对于树脂和交联剂的总共100重量份，含有15〜45重量％的交联剂。

    Field Effect Transistor and Method of Producing Same
    7.
    发明申请
    Field Effect Transistor and Method of Producing Same 失效
    场效应晶体管及其制作方法

    公开(公告)号：US20080277649A1

    公开(公告)日：2008-11-13

    申请号：US10583126

    申请日：2005-03-16

    申请人： Akane Masumoto ,  Daisuke Miura ,  Tomonari Nakayama

    发明人： Akane Masumoto ,  Daisuke Miura ,  Tomonari Nakayama

    IPC分类号： H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/0516 ,  H01L51/001 ,  H01L51/0077

    摘要： A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.

    摘要翻译： 提供一种场效应晶体管，其包括有机半导体层，该有机半导体层包括具有由通式（1）表示的单苯卟啉骨架的化合物：其中R 1和R 2独立地为 选自氢原子，卤素原子，羟基和各自具有1至12个碳原子的烷基，烯基，烷氧基，硫代烷基，烷基酯和芳基，条件是相邻的R 1， / SUB>可以相同或不同，并且相邻的R 2可以相同或不同，R 2 2中的至少两个不是氢原子; R 3是氢原子或芳基; M表示2个氢原子，金属原子或金属氧化物。

    Field effect transistor and method of manufacturing the same
    8.
    发明申请
    Field effect transistor and method of manufacturing the same 失效
    场效应晶体管及其制造方法

    公开(公告)号：US20080048185A1

    公开(公告)日：2008-02-28

    申请号：US11892326

    申请日：2007-08-22

    申请人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota

    发明人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota

    IPC分类号： H01L51/30

    CPC分类号： C07D487/22 ,  H01L51/0078 ,  H01L51/0545

    摘要： Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). General Formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)

    摘要翻译： 提供了具有有机半导体层的场效应晶体管，其中有机半导体层至少包含四苯并卟啉晶体，并且在CuKαX射线衍射中的两个或更多个布拉格角（2θ）处具有8.4°±0.2的峰 °，10.2°±0.2°，11.8°±0.2°和16.9°±0.2°，四苯并卟啉晶体包含由以下通式（1）表示的化合物。 通式（1）表示：（其中R 2各自表示氢原子，卤原子，羟基或烷基，烷氧基，硫代烷基或烷基酯基， 12个碳原子和R 3各自表示氢原子或芳基。）

    Field effect transistor and production process thereof
    10.
    发明申请
    Field effect transistor and production process thereof 失效
    场效应晶体管及其制作方法

    公开(公告)号：US20070096079A1

    公开(公告)日：2007-05-03

    申请号：US10559799

    申请日：2005-06-09

    申请人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota

    发明人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota

    IPC分类号： H01L29/08

    CPC分类号： H01L51/052 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0097

    摘要： There is provided a field effect transistor including a substrate, an organic semiconductor layer 6, an insulating layer 3, and a conductive layers 2, 4, and 5, wherein the insulating layer 3 comprises a cured product of a phenol resin represented by the following general formula (1): (R1, R2 and R3 each represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, X1 and X2 each represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.

    摘要翻译： 提供了包括基板，有机半导体层6，绝缘层3和导电层2,4和5的场效应晶体管，其中绝缘层3包括由下列物质表示的酚醛树脂的固化产物 通式（1）：（R 1，R 2，R 2和R 3）各自表示氢原子，卤素原子，羟甲基，具有 1至12个碳原子，烯基，炔基，烷氧基，烷硫基或烷基酯基，X 1和X 2各自表示氢原子，具有 1〜12个碳原子，烯基，炔基或芳基，n表示0〜2,000的整数。）根据本发明，能够使具有低表面平滑度的栅电极平滑的场效应晶体管， 可以获得对栅电极的电流泄漏小的电流。