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    Organic semiconductor device, field-effect transistor, and their manufacturing methods
    1.
    发明授权
    Organic semiconductor device, field-effect transistor, and their manufacturing methods 有权
    有机半导体器件，场效应晶体管及其制造方法

    公开(公告)号：US07795636B2

    公开(公告)日：2010-09-14

    申请号：US12410215

    申请日：2009-03-24

    申请人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Daisuke Miura

    发明人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Daisuke Miura

    IPC分类号： H01L51/40

    CPC分类号： H01L51/052 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.

    摘要翻译： 提供一种包括有机半导体层和绝缘层的有机半导体器件。 绝缘层由由包含树脂和交联剂的组合物形成的固化材料制成。 树脂含有具有羟基的有机树脂。 交联剂含有具有至少两个交联基团的化合物。 至少一个交联基团是羟甲基或NH基。 该组合物相对于树脂和交联剂的总共100重量份，含有15〜45重量％的交联剂。

    Semiconductor device
    2.
    发明申请
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US20070051947A1

    公开(公告)日：2007-03-08

    申请号：US11514922

    申请日：2006-09-05

    申请人： Tomonari Nakayama ,  Akane Masumoto ,  Shintetsu Go ,  Toshinobu Ohnishi

    发明人： Tomonari Nakayama ,  Akane Masumoto ,  Shintetsu Go ,  Toshinobu Ohnishi

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0529 ,  H01L21/02126 ,  H01L21/3122 ,  H01L51/0058 ,  H01L51/0074 ,  H01L51/0077 ,  H01L51/0078

    摘要： Provided is a semiconductor device including: a substrate; a layer containing one or more kinds of polymer compounds on the substrate; and an organic semiconductor layer in contact with the layer containing the one or more kinds of polymer compounds, in which at least one kind of the one or more kinds of polymer compounds is a polymer compound having one or more secondary or tertiary aliphatic amino groups, wherein the one or more aliphatic amino groups of the polymer compound having the aliphatic amino groups are bound to at least one of a side chain or a branched chain, and wherein said the layer containing the one or more kinds of polymer compounds contains polysiloxane compounds. With the constitution, a semiconductor device excellent in crystallinity and orientation can be provided.

    摘要翻译： 提供一种半导体器件，包括：衬底; 在基材上含有一种或多种聚合物化合物的层; 以及与含有上述一种或多种聚合物化合物的层接触的有机半导体层，其中至少一种所述一种或多种聚合物化合物是具有一个或多个仲或叔脂族氨基的高分子化合物， 其中具有脂肪族氨基的高分子化合物的一个以上的脂肪族氨基与侧链或支链中的至少一个结合，其中，所述含有上述一种或多种高分子化合物的层含有聚硅氧烷化合物。 通过该结构，可以提供优异的结晶性和取向性的半导体器件。

    Surface treating apparatus for solid particles, surface treating method therefor and method for producing toner
    3.
    发明授权
    Surface treating apparatus for solid particles, surface treating method therefor and method for producing toner 失效
    固体颗粒表面处理装置及其表面处理方法及调色剂的制造方法

    公开(公告)号：US5865381A

    公开(公告)日：1999-02-02

    申请号：US902327

    申请日：1997-07-29

    申请人： Satoshi Mitsumura ,  Toshinobu Ohnishi ,  Yoshinori Tsuji

    发明人： Satoshi Mitsumura ,  Toshinobu Ohnishi ,  Yoshinori Tsuji

    IPC分类号： G03G9/087 ,  B01J2/00 ,  B01J2/10 ,  B02C13/18 ,  B02C13/282 ,  G03G9/08 ,  B02C13/00 ,  B02C13/28

    CPC分类号： B01J2/10 ,  B01J2/006 ,  G03G9/0802

    摘要： An apparatus for treating the surfaces of solid particles has at least a first cylindrical treating chamber and a rotary shaft and a first rotor having two or more blades on its front face, contained in the first cylindrical treating chamber. A powder charging aperture for introducing the solid particles into the first cylindrical treating chamber together with gas is provided at the center of the front wall of the first cylindrical treating chamber, opposed to the front face of the first rotor. A first powder discharging aperture for discharging the treated solid particles is provided at the center of the rear wall of the first cylindrical treating chamber, opposed to the rear face of the first rotor. The first rotor is connected with the rotary shaft and rotated by the rotation of the rotary shaft. The height H.sub.a of the blades, the gap L.sub.1a between the tip of each of the blades and the front wall, the largest diameter R.sub.1a of the first rotor and the gap L.sub.2a between the blades and the sidewall of the first cylindrical treating chamber satisfy the following conditions:0.1.ltoreq.L.sub.1a /H.sub.a .ltoreq.5.0, 50.times.10.sup.-3 .ltoreq.H.sub.a /R.sub.1a .ltoreq.400.times.10.sup.-3 and 1.0.times.10.sup.-3 .ltoreq.L.sub.2a /R.sub.1a .ltoreq.95.times.10.sup.-3.

    摘要翻译： 用于处理固体颗粒表面的装置具有至少第一圆柱形处理室和旋转轴以及在其前表面上具有两个或更多个叶片的第一转子，该第一转子包含在第一圆柱形处理室中。 在与第一转子的前表面相对的第一圆柱形处理室的前壁的中心处设置用于将固体颗粒与气体一起引入第一圆柱形处理室的粉末填充孔。 在第一圆筒形处理室的后壁的与第一转子的后表面相对的中心处设置有用于排出经处理的固体颗粒的第一粉末排放孔。 第一转子与旋转轴连接并通过旋转轴的旋转而旋转。 叶片的高度Ha，每个叶片的前端和前壁之间的间隙L1a，第一转子的最大直径R1a和叶片与第一圆柱形处理室的侧壁之间的间隙L2a满足以下 条件：0.1

    Field effect transistor and production process thereof
    4.
    发明授权
    Field effect transistor and production process thereof 失效
    场效应晶体管及其制作方法

    公开(公告)号：US07605392B2

    公开(公告)日：2009-10-20

    申请号：US10559799

    申请日：2005-06-09

    申请人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota

    发明人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota

    IPC分类号： H01L29/08

    CPC分类号： H01L51/052 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0097

    摘要： There is provided a field effect transistor including a substrate, an organic semiconductor layer 6, an insulating layer 3, and a conductive layers 2, 4, and 5, wherein the insulating layer 3 comprises a cured product of a phenol resin represented by the following general formula (1): (R1, R2 and R3 each represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, X1 and X2 each represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.

    摘要翻译： 提供了包括基板，有机半导体层6，绝缘层3和导电层2,4和5的场效应晶体管，其中绝缘层3包括由下列物质表示的酚醛树脂的固化产物 通式（1）：（R1，R2和R3各自表示氢原子，卤素原子，羟甲基，碳原子数1〜12的烷基，烯基，炔基，烷氧基，烷硫基或烷基酯基） X2表示氢原子，碳原子数1〜12的烷基，烯基，炔基或芳基，n表示0〜2,000的整数。）根据本发明，能够平滑化的场效应晶体管 可以获得其中对栅电极的电流泄漏小的表面平滑度低的栅电极。

    Organic semiconductor device, field-effect transistor, and their manufacturing methods
    6.
    发明授权
    Organic semiconductor device, field-effect transistor, and their manufacturing methods 失效
    有机半导体器件，场效应晶体管及其制造方法

    公开(公告)号：US07511296B2

    公开(公告)日：2009-03-31

    申请号：US11373966

    申请日：2006-03-14

    申请人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Daisuke Miura

    发明人： Tomonari Nakayama ,  Toshinobu Ohnishi ,  Daisuke Miura

    IPC分类号： H01L35/24

    CPC分类号： H01L51/052 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.

    摘要翻译： 提供一种包括有机半导体层和绝缘层的有机半导体器件。 绝缘层由由包含树脂和交联剂的组合物形成的固化材料制成。 树脂含有具有羟基的有机树脂。 交联剂含有具有至少两个交联基团的化合物。 至少一个交联基团是羟甲基或NH基。 该组合物相对于树脂和交联剂的总共100重量份，含有15〜45重量％的交联剂。

    Field effect transistor and method of manufacturing the same
    9.
    发明授权
    Field effect transistor and method of manufacturing the same 失效
    场效应晶体管及其制造方法

    公开(公告)号：US07394096B2

    公开(公告)日：2008-07-01

    申请号：US11892326

    申请日：2007-08-22

    申请人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota

    发明人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota

    IPC分类号： H01L51/30 ,  C07D471/00

    CPC分类号： C07D487/22 ,  H01L51/0078 ,  H01L51/0545

    摘要： Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.).

    摘要翻译： 提供了具有有机半导体层的场效应晶体管，其中有机半导体层至少包含四苯并卟啉晶体，并且在CuKαX射线衍射中的两个或更多个布拉格角（2θ）处具有8.4°±0.2的峰 °，10.2°±0.2°，11.8°±0.2°和16.9°±0.2°，四苯并卟啉晶体包含由以下通式（1）表示的化合物。 （其中R 2各自表示氢原子，卤素原子，羟基或烷基，烷氧基，硫代烷基或碳原子数1〜12的烷基酯基，R 3个各自表示氢原子或芳基）。

    Production method of semiconductor device
    10.
    发明申请
    Production method of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US20070085072A1

    公开(公告)日：2007-04-19

    申请号：US11513062

    申请日：2006-08-31

    申请人： Akane Masumoto ,  Shintetsu Go ,  Tomonari Nakayama ,  Toshinobu Ohnishi

    发明人： Akane Masumoto ,  Shintetsu Go ,  Tomonari Nakayama ,  Toshinobu Ohnishi

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0533 ,  H01L21/02126 ,  H01L21/3122 ,  H01L51/0003 ,  H01L51/0027 ,  H01L51/0055 ,  H01L51/0558

    摘要： Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.

    摘要翻译： 提供一种制造具有有机半导体层的半导体器件的方法，其包括在衬底上提供结晶促进层的步骤; 在结晶促进层上提供有机半导体前体; 以及将光能和热能同时施加到所述有机半导体前体以形成包含有机半导体的层。 由此，提供了低成本，耐久性优异的有机半导体装置。