- 专利标题： Semiconductor device having a capping layer including cobalt and method of fabricating the same
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申请号： US11365063申请日： 2006-02-28
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公开(公告)号： US20060145269A1公开(公告)日： 2006-07-06
- 发明人: Jung-Wook Kim , Hyeon-Deok Lee , In-Sun Park , Ji-Soon Park
- 申请人： Jung-Wook Kim , Hyeon-Deok Lee , In-Sun Park , Ji-Soon Park
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2003-59492 20030827
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L23/48
摘要：
A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.
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