发明申请
- 专利标题: Package for gallium nitride semiconductor devices
- 专利标题(中): 氮化镓半导体器件封装
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申请号: US11032666申请日: 2005-01-10
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公开(公告)号: US20060151868A1公开(公告)日: 2006-07-13
- 发明人: TingGang Zhu , Bryan Shelton , Marek Pabisz , Mark Gottfried , Linlin Liu , Boris Peres , Alex Ceruzzi
- 申请人: TingGang Zhu , Bryan Shelton , Marek Pabisz , Mark Gottfried , Linlin Liu , Boris Peres , Alex Ceruzzi
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40
摘要:
A packaged semiconductor device, in particular a gallium nitride semiconductor structure including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of the lower semiconductor layer. The semiconductor structure includes a plurality of mesas projecting upwardly from the lower layer, each of the mesas including a portion of the upper layer and defining an upper contact surface separated form adjacent mesas by a portion of the lower layer surface. The device further includes a die mounting support, wherein the bottom surface of the die is attached to the top surface of the die mounting support; and a plurality of spaced external conductors extending from the support, at least once of said spaced external conductors having a bond wire post at one end thereof; with a bonding wire extending between the bond wire post and a contact region to the top surface of the plurality of mesas.
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