公开(公告)号：US20110209255P1

公开(公告)日：2011-08-25

申请号：US12711194

申请日：2010-02-23

申请人： William Alfred Dozier, JR. ,  Bryan Shelton Wilkins ,  Jim Pitts ,  Curtis Jay Hansen ,  Floyd M. Woods ,  James D. Spiers ,  Qinghong Chen ,  Zhongqi Qin ,  Yingchun Jiang ,  Xia Gu ,  Aichun Xu

发明人： William Alfred Dozier, JR. ,  Bryan Shelton Wilkins ,  Jim Pitts ,  Curtis Jay Hansen ,  Floyd M. Woods ,  James D. Spiers ,  Qinghong Chen ,  Zhongqi Qin ,  Yingchun Jiang ,  Xia Gu ,  Aichun Xu

IPC分类号： A01H5/00

CPC分类号： A01H5/08

摘要： A new and distinct cultivar of the species Actinidia chinesis Planch is described. ‘AU Golden Sunshine’ has a low chilling requirement, fruit is early maturing, excellent flavor with a non acid sweet taste and a high percent soluble solids and dry matter content. ‘AU Golden Sunshine’ matures about 20 days after ‘AU Golden Dragon’ and 30 days before ‘Hort 16A’ (patented), the industry standard for golden flesh kiwi cultivars. ‘AU Golden Sunshine’ fruit quality indices are similar to fruit quality indices of ‘AU Golden Dragon’ and ‘Hort 16A’ (patented). There have been no differences in plant performance and fruit quality of ‘AU Golden Sunshine’ plants grown in China and Alabama.

摘要翻译： 描述了猕猴桃猕猴桃的新的和独特的品种。 “AU金阳光”具有低冷却要求，水果早熟，味道极佳，具有非酸甜味和高溶解性固体含量及干物质含量。 “AU金阳光”在“AU金龙”约20天之后，在“16A”（专利）30天前成熟，是猕猴桃品种的行业标准。 “AU金阳光”果品质量指标与“AU金龙”，“Hort 16A”（专利）水果品质指标相似。 在中国和阿拉巴马州种植的“AU金阳光”植物的植物性能和果实质量没有差异。

公开(公告)号：US20070096120A1

公开(公告)日：2007-05-03

申请号：US11260784

申请日：2005-10-27

申请人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

发明人： Ivan Eliashevich ,  Hari Venugopalan ,  Emil Stefanov ,  Xian-An Cao ,  Bryan Shelton

IPC分类号： H01L31/12

CPC分类号： H01L33/20

摘要： An LED device (90) includes: an epitaxial structure (100) having a plurality of layers of semiconductor material and forming an active light-generating region (120) which generates light in response to electrical power being supplied to the LED device (90); and, a substrate (200) that is substantially transparent in a wavelength range corresponding to the light generated by the active light-generating region (120). The substrate has first and second opposing end faces (202, 206) and a plurality of side walls (210) extending therebetween, including a first side wall having a first portion thereof that defines a first surface (212, 214, 216, 218) which is not substantially normal to the first face (202) of the substrate (200). The epitaxial structure (100) is disposed on the first face (202) of the substrate (200).

摘要翻译： LED器件（90）包括：具有多层半导体材料的外延结构（100），并形成响应供给LED器件（90）的电力产生光的有源发光区域（120） ; 以及在与由所述有源发光区域（120）产生的光对应的波长范围内基本透明的基板（200）。 衬底具有第一和第二相对的端面（202,206）和在其之间延伸的多个侧壁（210），包括第一侧壁，其具有限定第一表面（212,214,216,218）的第一部分， 其基本上不垂直于衬底（200）的第一面（202）。 外延结构（100）设置在基板（200）的第一面（202）上。

公开(公告)号：US20050179107A1

公开(公告)日：2005-08-18

申请号：US10780526

申请日：2004-02-17

申请人： Milan Pophristic ,  Michael Murphy ,  Richard Stall ,  Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi

发明人： Milan Pophristic ,  Michael Murphy ,  Richard Stall ,  Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi

IPC分类号： H01L21/28 ,  H01L29/15 ,  H01L29/20 ,  H01L29/45 ,  H01L29/47 ,  H01L29/778 ,  H01L29/872 ,  H01L27/095

CPC分类号： H01L29/452 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/7787 ,  H01L29/872

摘要： A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.

摘要翻译： 通过在另一层上形成掺杂和未掺杂的氮化物半导体材料的交替子层，通过调制掺杂形成可重复且均匀的低掺杂层。 肖特基二极管由设置在更高掺杂的氮化物半导体层顶上的这种低掺杂氮化物半导体层形成。 当器件正向偏置时，所得器件具有低导通电阻，器件反向偏置时具有高击穿电压。

公开(公告)号：US20110209256P1

公开(公告)日：2011-08-25

申请号：US12711204

申请日：2010-02-23

申请人： William Alfred Dozier, JR. ,  Bryan Shelton Wilkins ,  Jim Pitts ,  Curtis Jay Hansen ,  James D. Spiers

发明人： William Alfred Dozier, JR. ,  Bryan Shelton Wilkins ,  Jim Pitts ,  Curtis Jay Hansen ,  James D. Spiers

IPC分类号： A01H5/00

CPC分类号： A01H5/08

摘要： A new and distinct cultivar of the species Actinidia chinesis Planch is described. This cultivar named ‘AU Golden Tiger’ was developed from seeds collected from an open pollinated ‘AU Golden Dragon’ fruit. The seedling has been reproduced by rooted cuttings and grafting and tested in replicated cultivar trials. It maintains all of its unique characteristics after each propagation. Its bloom period overlaps the bloom period of ‘AU Golden Sunshine’ and is the pollinizer for ‘AU Golden Sunshine’.

摘要翻译： 描述了猕猴桃猕猴桃的新的和独特的品种。 这个名为“澳大利亚金虎”的品种是从开放授粉的“澳大利亚金龙”水果的种子开发的。 通过根尖切割和移植复制幼苗，并在复制品种试验中进行测试。 它在每次传播后保持其所有的独特特征。 其开花期与“澳大利亚黄金阳光”的绽放期重叠，是“澳大利亚金阳光”的授粉者。

公开(公告)号：US20060154455A1

公开(公告)日：2006-07-13

申请号：US11371738

申请日：2006-03-09

申请人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan Shelton ,  Alex Ceruzzi ,  Michael Murphy ,  Richard Stall

发明人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan Shelton ,  Alex Ceruzzi ,  Michael Murphy ,  Richard Stall

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： H01L29/155 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007

摘要： A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

摘要翻译： 在硅衬底上生长氮化物半导体，通过沉积几个单层铝，以保护硅衬底免受生长过程中使用的氨的影响，然后从氮化铝形成成核层，并形成包含多个超晶格Al 具有不同组成的半导体和GaN或其它富镓氮化物半导体的中间层的半导体。 所得结构具有优异的晶体质量。 在器件完成之前除去用于外延生长的硅衬底，以便在诸如高电子迁移率晶体管的器件中提供优异的电性能。

公开(公告)号：US20060145674A1

公开(公告)日：2006-07-06

申请号：US11029266

申请日：2005-01-05

申请人： Bryan Shelton ,  Boris Peres ,  Daniel McGlynn

发明人： Bryan Shelton ,  Boris Peres ,  Daniel McGlynn

IPC分类号： G05F1/40 ,  G05F1/618

CPC分类号： H02M1/4225 ,  H02M3/155 ,  H02M7/2176 ,  Y02B70/126 ,  Y02B70/1483

摘要： A converter is provided having an AC input and a DC output. The converter includes a rectifier that receives the AC input and that provides a rectifier output, a series connected current to magnetic field energy storage device and current interrupter connected across the rectifier output and a series connected gallium nitride diode and output charge storage device connected between a midpoint of the series connected magnetic field energy storage device and current interrupter and a terminal of the rectifier output and wherein the converter is characterized in not needing a transient voltage suppression circuit.

摘要翻译： A转换器具有AC输入和DC输出。 该转换器包括一个接收AC输入并提供整流器输出的整流器，连接在整流器输出端的磁场能量存储装置和断流器的串联电流和串联的氮化镓二极管和输出电荷存储装置 串联连接的磁场蓄能装置的中点和电流断流器以及整流器输出的端子，其中转换器的特征在于不需要瞬态电压抑制电路。

公开(公告)号：US20050263854A1

公开(公告)日：2005-12-01

申请号：US11123796

申请日：2005-05-06

申请人： Bryan Shelton ,  Hari Venugopalan ,  Sebastien Libon ,  Ivan Eliashevich

发明人： Bryan Shelton ,  Hari Venugopalan ,  Sebastien Libon ,  Ivan Eliashevich

IPC分类号： B23K26/40 ,  H01L21/461 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L33/0095 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/78

摘要： A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire wafer. The sapphire wafer is separated along the laser scribe lines to separate a plurality of device dice defined by the grid array pattern of laser scribe lines. Each device die includes (i) a device and (ii) a portion of the sapphire wafer having the thickness greater than 125 microns. In some embodiments, a GaN LED device die includes a GaN based LED device, and a sapphire substrate supporting the GaN based LED device. The sapphire substrate has: (i) a thickness greater than 125 microns effective for increased light extraction due to a lower critical angle for total internal reflection; and (ii) sides generated by laser scribing.

摘要翻译： 激光刻划厚度大于125微米并具有设置在其上的器件的蓝宝石晶片，以形成激光刻划到蓝宝石晶片中的激光划线的栅格阵列图案。 沿着激光划线分离蓝宝石晶片以分离由激光划线的栅格阵列图案限定的多个器件裸片。 每个器件裸片包括（i）器件和（ii）蓝宝石晶片的厚度大于125微米的部分。 在一些实施例中，GaN LED器件管芯包括GaN基LED器件和支撑GaN基LED器件的蓝宝石衬底。 蓝宝石衬底具有：（i）厚度大于125微米，对于增加光提取有效，由于全内反射的临界角较小; 和（ii）通过激光划线产生的边。

公开(公告)号：US20050225973A1

公开(公告)日：2005-10-13

申请号：US10817603

申请日：2004-04-02

申请人： Ivan Eliashevich ,  Chris Bohler ,  Bryan Shelton ,  Hari Venugopalan ,  Xiang Gao

发明人： Ivan Eliashevich ,  Chris Bohler ,  Bryan Shelton ,  Hari Venugopalan ,  Xiang Gao

IPC分类号： H01L21/00 ,  H01L27/15 ,  H01L33/20

CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting semiconductor device die (10, 110, 210, 310) includes an electrically insulating substrate (12, 112). First and second spatially separated electrodes (60, 62, 260, 262, 360, 362) are disposed on the electrically insulating substrate. The first and second electrodes define an electrical current flow direction directed from the first electrode to the second electrode. A plurality of light emitting diode mesas (30, 130, 130′, 230, 330) are disposed on the substrate between the first and second spatially separated electrodes. Electrical series interconnections (50, 150, 250, 350) are disposed on the substrate between neighboring light emitting diode mesas. Each series interconnection carries electrical current flow between the neighboring mesas in the electrical current flow direction.

摘要翻译： 发光半导体器件管芯（10,110,210,310）包括电绝缘衬底（12,112）。 第一和第二空间分离的电极（60,62,260,262,360,362）设置在电绝缘基板上。 第一和第二电极限定从第一电极指向第二电极的电流流动方向。 多个发光二极管台面（30,130,130'，230,330）设置在第一和第二空间分离的电极之间的衬底上。 在相邻的发光二极管台面之间的基板上设置电气串联互连（50,150,250,350）。 每个串联互连在电流流动方向上在相邻台面之间承载电流。

公开(公告)号：US20050179104A1

公开(公告)日：2005-08-18

申请号：US10780363

申请日：2004-02-17

申请人： Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi ,  Michael Murphy ,  Milan Pophristic ,  Boris Peres ,  Richard Stall ,  Xiang Gao ,  Ivan Eliashevich

发明人： Bryan Shelton ,  Linlin Liu ,  Alex Ceruzzi ,  Michael Murphy ,  Milan Pophristic ,  Boris Peres ,  Richard Stall ,  Xiang Gao ,  Ivan Eliashevich

IPC分类号： H01L21/60 ,  H01L29/06 ,  H01L29/20 ,  H01L29/47 ,  H01L29/872 ,  H01L21/00 ,  H01L31/0328

CPC分类号： H01L24/81 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/872 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/00

摘要： A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and reduce current crowding in the Schottky contact, thereby reducing the forward resistance of a device. The multiple mesas may be isolated from one another and have sizes and shapes optimized for reducing the forward resistance. Alternatively, some of the mesas may be finger-shaped and intersect with a central mesa or a bridge mesa, and some or all of the ohmic contacts are interdigitated with the finger-shaped mesas. The dimensions of the finger-shaped mesas and the perimeter of the intersecting structure may be optimized to reduce the forward resistance. The Schottky diodes may be mounted to a submount in a flip chip arrangement that further reduces the forward voltage as well as improves power dissertation and reduces heat generation.

摘要翻译： 横向导通肖特基二极管包括形成肖特基接触的多个台面区域，其至少由欧姆接触分开，以减小电流路径长度并减少肖特基接触中的电流拥挤，从而降低器件的正向电阻。 多个台面可以彼此隔离并且具有优化的尺寸和形状以减少前向阻力。 或者，一些台面可以是手指形状并与中央台面或桥台面相交，并且部分或全部欧姆接触件与指状台面相互交错。 指状台面的尺寸和相交结构的周长可以被优化以减小正向阻力。 肖特基二极管可以以倒装芯片布置的方式安装到基座上，这进一步降低了正向电压，并且改善了功率论文并减少了发热。

公开(公告)号：USPP22191P2

公开(公告)日：2011-10-11

申请号：US12711219

申请日：2010-02-23

申请人： William Alfred Dozier, Jr. ,  Bryan Shelton Wilkins ,  Jim Pitts ,  Curtis Jay Hansen ,  Floyd M. Woods ,  James D. Spiers ,  Qinghong Chen ,  Zhongqi Qin ,  Yingchun Jiang ,  Xia Gu ,  Aichun Xu

发明人： William Alfred Dozier, Jr. ,  Bryan Shelton Wilkins ,  Jim Pitts ,  Curtis Jay Hansen ,  Floyd M. Woods ,  James D. Spiers ,  Qinghong Chen ,  Zhongqi Qin ,  Yingchun Jiang ,  Xia Gu ,  Aichun Xu

IPC分类号： A01H5/00

CPC分类号： A01H5/08

摘要： A new and distinct cultivar of the species Actinidia chinesis Planch is described. ‘AU Golden Dragon’ has a low chilling requirement, fruit is very early maturing, excellent flavor with a non acid sweet taste, and high soluble solids and dry matter content. ‘AU Golden Dragon’ matures about 50 days ahead of ‘Hort 16A’ (patented), the industry standard for golden flesh kiwi, therefore, the two cultivars will not compete in the market place. ‘AU Golden Dragon’ fruit quality indices are similar to fruit quality indices of ‘Hort 16A’ (patented). There have been no differences in plant performance and fruit quality of ‘AU Golden Dragon’ plants grown in China and Central Alabama.

摘要翻译： 描述了猕猴桃猕猴桃的新的和独特的品种。 “AU金龙”具有低冷却要求，水果非常早熟，味道极佳，具有非酸甜味，高溶解性和干物质含量。 “金金龙”成熟于“16A”（专利）“黄金猕猴桃行业标准”前的约50天，因此，两个品种不会在市场上竞争。 “AU金龙”果实质量指标与“Hort 16A”（获得专利）的果实质量指标相似。 中国和阿拉巴马州中部种植的“澳大利亚金龙”植物的植物表现和果实质量没有差异。