- 专利标题: Semiconductor device
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申请号: US10543378申请日: 2003-12-26
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公开(公告)号: US20060154482A1公开(公告)日: 2006-07-13
- 发明人: Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
- 申请人: Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
- 优先权: JP2003-17948 20030127
- 国际申请: PCT/JP03/16990 WO 20031226
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.
公开/授权文献
- US07476619B2 Semiconductor device 公开/授权日:2009-01-13