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    Semiconductor device
    1.
    发明申请
    Semiconductor device 失效

    公开(公告)号：US20060154482A1

    公开(公告)日：2006-07-13

    申请号：US10543378

    申请日：2003-12-26

    申请人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

    发明人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76862

    摘要： An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.

    Semiconductor device
    2.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07476619B2

    公开(公告)日：2009-01-13

    申请号：US10543378

    申请日：2003-12-26

    申请人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

    发明人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76862

    摘要： An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.

    摘要翻译： 本发明的目的是通过在半导体器件的制造工艺中使用超临界状态的介质，可以将Cu扩散防止膜和Cu膜嵌入到高纵横比的精细图案中。 本发明的目的是通过一种基板处理方法实现的，该方法包括：第一步骤，通过将含有超临界状态的第一介质的第一处理介质提供到基板上来处理基板;第二步骤，在所述基板上形成Cu扩散防止膜 通过将含有超临界状态的第二介质的第二处理介质供给到所述基板上，以及通过将含有超临界状态的第三介质的第三处理介质供给到所述基板上而在所述基板上形成Cu膜的第三工序来进行。

    Method for making metal interconnection with chlorine plasma etch
    5.
    发明授权
    Method for making metal interconnection with chlorine plasma etch 失效
    用氯等离子体蚀刻制造金属互连的方法

    公开(公告)号：US5627102A

    公开(公告)日：1997-05-06

    申请号：US569319

    申请日：1995-12-08

    申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

    发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

    IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/28

    CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

    摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

    摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

    Chemical vapor deposition apparatus for forming thin film
    9.
    发明授权
    Chemical vapor deposition apparatus for forming thin film 失效
    用于形成薄膜的化学气相沉积设备

    公开(公告)号：US5209182A

    公开(公告)日：1993-05-11

    申请号：US875424

    申请日：1992-04-29

    申请人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

    发明人： Tomohiro Ohta ,  Eiichi Kondoh ,  Tohru Mitomo ,  Kenichi Otsuka ,  Hiroshi Sekihashi

    IPC分类号： C23C16/46

    CPC分类号： C23C16/463 ,  C23C16/46

    摘要： An apparatus for forming, by a chemical vapor deposition process, a thin film of crystals such as diamond on a surface of a heated substrate placed in a reaction vessel. The apparatus has a substrate supporting structure, a heater for heating the substrate by heat conduction or by electric current supplied directly to the substrate, and a cooling device for cooling the substrate. The heater is controlled in accordance with the measured temperature of the substrate so as to accurately maintain the substrate temperature at a constant level.

    摘要翻译： 一种用于通过化学气相沉积工艺在放置在反应容器中的加热衬底的表面上形成诸如金刚石的晶体薄膜的装置。 该装置具有基板支撑结构，用于通过热传导加热基板的加热器或直接供应到基板的电流，以及用于冷却基板的冷却装置。 根据基板的测量温度来控制加热器，以便将基板温度准确地维持在恒定水平。

    Method for making metal interconnection
    10.
    发明授权
    Method for making metal interconnection 失效
    金属互连方法

    公开(公告)号：US06063703A

    公开(公告)日：2000-05-16

    申请号：US81047

    申请日：1998-05-19

    申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

    发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

    IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44

    CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

    摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

    摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，在绝缘膜上形成诸如TiN的下面的金属膜和连接孔的底壁和侧壁，通过CVD 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。