发明申请
- 专利标题： Interface engineering to improve adhesion between low k stacks
- 专利标题（中）： 界面工程，以改善低k堆栈之间的粘附
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申请号： US11142124申请日： 2005-06-01
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公开(公告)号： US20060160376A1公开(公告)日： 2006-07-20
- 发明人: Deenesh Padhi , Ganesh Balasubramanian , Annamalai Lakshmanan , Zhenjiang Cui , Juan Rocha-Alvarez , Bok Kim , Hichem M'Saad , Steven Reiter , Francimar Schmitt
- 申请人： Deenesh Padhi , Ganesh Balasubramanian , Annamalai Lakshmanan , Zhenjiang Cui , Juan Rocha-Alvarez , Bok Kim , Hichem M'Saad , Steven Reiter , Francimar Schmitt
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.
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