发明申请
US20060163630A1 TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
失效
TiC作为高k SiO 2栅极堆叠上的热稳定的p金属碳化物
- 专利标题: TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
- 专利标题(中): TiC作为高k SiO 2栅极堆叠上的热稳定的p金属碳化物
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申请号: US11034597申请日: 2005-01-13
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公开(公告)号: US20060163630A1公开(公告)日: 2006-07-27
- 发明人: Alessandro Callegari , Michael Gribelyuk , Dianne Lacey , Fenton McFeely , Katherine Saenger , Sufi Zafar
- 申请人: Alessandro Callegari , Michael Gribelyuk , Dianne Lacey , Fenton McFeely , Katherine Saenger , Sufi Zafar
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L29/76 ; H01L31/062 ; H01L31/113 ; H01L31/119
![TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks](/abs-image/US/2006/07/27/US20060163630A1/abs.jpg.150x150.jpg)
摘要:
A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.