发明申请
- 专利标题： Semiconductor integrated circuit device and process for manufacturing the same
- 专利标题（中）： 半导体集成电路器件及其制造方法
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申请号： US11396000申请日： 2006-04-03
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公开(公告)号： US20060175651A1公开(公告)日： 2006-08-10
- 发明人: Naoki Yamamoto , Yoshikazu Tanabe , Hiroshige Kogayu , Takehiko Yoshida
- 申请人： Naoki Yamamoto , Yoshikazu Tanabe , Hiroshige Kogayu , Takehiko Yoshida
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 优先权： JP2001-069518 20010312
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L29/00
摘要：
Formation of an WNX film 24 constituting a barrier layer of a gate electrode 7A having a polymetal structure is effected in an atmosphere containing a high concentration nitrogen gas, whereby release of N (nitrogen) from the WNX film 24 is suppressed in the heat treatment step after the formation of the gate electrode 7A.
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