- 专利标题： Integrated circuit arrangement with low-resistance contacts and method for production thereof
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申请号： US11324803申请日： 2006-01-03
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公开(公告)号： US20060175666A1公开(公告)日： 2006-08-10
- 发明人: Franz Hofmann , Richard Luyken , Wolfgang Roesner , Michael Specht
- 申请人： Franz Hofmann , Richard Luyken , Wolfgang Roesner , Michael Specht
- 优先权： DE10330730.3 20030708
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/336
摘要：
An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor and the electrode is increased without increasing the lateral dimensions using partial regions of the semiconductor and/or of the electrode that extend through a transition layer between the semiconductor and electrode.
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