发明申请
- 专利标题： Low power magnetoelectronic device structures utilizing enhanced permeability materials
- 专利标题（中）： 利用增强的渗透性材料的低功率磁电子器件结构
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申请号： US11066884申请日： 2005-02-24
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公开(公告)号： US20060186495A1公开(公告)日： 2006-08-24
- 发明人: Nicholas Rizzo , Renu Dave , Jon Slaughter , Srinivas Pietambaram
- 申请人： Nicholas Rizzo , Renu Dave , Jon Slaughter , Srinivas Pietambaram
- 主分类号： H01L43/00
- IPC分类号： H01L43/00
摘要：
Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.