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    SYNTHETIC ANTIFERROMAGNET STRUCTURES FOR USE IN MTJS IN MRAM TECHNOLOGY
    2.
    发明申请
    SYNTHETIC ANTIFERROMAGNET STRUCTURES FOR USE IN MTJS IN MRAM TECHNOLOGY 有权
    用于MRAM技术的MTJS中的合成抗体结构

    公开(公告)号：US20050133840A1

    公开(公告)日：2005-06-23

    申请号：US10740338

    申请日：2003-12-18

    申请人： Srinivas Pietambaram ,  Renu Dave ,  Jon Slaughter ,  Jijun Sun

    发明人： Srinivas Pietambaram ,  Renu Dave ,  Jon Slaughter ,  Jijun Sun

    IPC分类号： G11C11/16 ,  H01L29/76 ,  H01L31/113 ,  H01L43/08

    CPC分类号： G11C11/16 ,  H01L43/08 ,  Y10T428/1121

    摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.

    摘要翻译： 在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。 该SAF由被耦合层隔开的两个铁磁层组成。 耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。 优选的基材是钌，优选的其它材料是钽。 进一步提高这些优点，在​​钽和铁磁层之一的界面处加入钴铁。 此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。 耦合层本身也可以是合金。

    Low power magnetoelectronic device structures utilizing enhanced permeability materials
    4.
    发明申请
    Low power magnetoelectronic device structures utilizing enhanced permeability materials 有权
    利用增强的渗透性材料的低功率磁电子器件结构

    公开(公告)号：US20060186495A1

    公开(公告)日：2006-08-24

    申请号：US11066884

    申请日：2005-02-24

    申请人： Nicholas Rizzo ,  Renu Dave ,  Jon Slaughter ,  Srinivas Pietambaram

    发明人： Nicholas Rizzo ,  Renu Dave ,  Jon Slaughter ,  Srinivas Pietambaram

    IPC分类号： H01L43/00

    CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10S977/838 ,  Y10S977/933

    摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.

    摘要翻译： 提供了低功率磁电子器件结构及其制造方法。 一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。 增强的导电介电材料具有不小于约1.5的渗透性。 还提供了一种制造磁电子器件结构的方法。 该方法包括制造磁电子器件（102）并沉积导线（104）。 形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于 磁电子器件。

    Low power magnetoelectronic device structures utilizing enhanced permeability materials
    5.
    发明授权
    Low power magnetoelectronic device structures utilizing enhanced permeability materials 失效
    利用增强的渗透性材料的低功率磁电子器件结构

    公开(公告)号：US07635902B2

    公开(公告)日：2009-12-22

    申请号：US11867189

    申请日：2007-10-04

    申请人： Nicholas D. Rizzo ,  Renu Dave ,  Jon M. Slaughter ,  Srinivas V. Pietambaram

    发明人： Nicholas D. Rizzo ,  Renu Dave ,  Jon M. Slaughter ,  Srinivas V. Pietambaram

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10S977/838 ,  Y10S977/933

    摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5.A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.

    摘要翻译： 提供了低功率磁电子器件结构及其制造方法。 一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。 增强的导电介电材料具有不小于约1.5的渗透性。 还提供了一种制造磁电子器件结构的方法。 该方法包括制造磁电子器件（102）并沉积导线（104）。 形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于 磁电子器件。

    LOW POWER MAGNETOELECTRONIC DEVICE STRUCTURES UTILIZING ENHANCED PERMEABILITY MATERIALS
    6.
    发明申请
    LOW POWER MAGNETOELECTRONIC DEVICE STRUCTURES UTILIZING ENHANCED PERMEABILITY MATERIALS 失效
    低功率电子设备结构使用增强渗透性材料

    公开(公告)号：US20080017939A1

    公开(公告)日：2008-01-24

    申请号：US11867189

    申请日：2007-10-04

    申请人： Nicholas Rizzo ,  Renu Dave ,  Jon Slaughter ,  Srinivas Pietambaram

    发明人： Nicholas Rizzo ,  Renu Dave ,  Jon Slaughter ,  Srinivas Pietambaram

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10S977/838 ,  Y10S977/933

    摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.

    摘要翻译： 提供了低功率磁电子器件结构及其制造方法。 一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。 增强的导电介电材料具有不小于约1.5的渗透性。 还提供了一种制造磁电子器件结构的方法。 该方法包括制造磁电子器件（102）并沉积导线（104）。 形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于 磁电子器件。

    Low power magnetoresistive random access memory elements
    7.
    发明申请
    Low power magnetoresistive random access memory elements 有权

    公开(公告)号：US20070037299A1

    公开(公告)日：2007-02-15

    申请号：US11581951

    申请日：2006-10-16

    申请人： Nicholas Rizzo ,  Renu Dave ,  Bradley Engel ,  Jason Janesky ,  JiJun Sun

    发明人： Nicholas Rizzo ,  Renu Dave ,  Bradley Engel ,  Jason Janesky ,  JiJun Sun

    IPC分类号： H01L21/00

    CPC分类号： G11C11/16 ,  H01L27/222 ,  H01L43/08

    摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−σsat)−(Hsw+σsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

    Magnetic tunnel junction element structures and methods for fabricating the same
    8.
    发明申请
    Magnetic tunnel junction element structures and methods for fabricating the same 有权
    磁隧道结元件结构及其制造方法

    公开(公告)号：US20060017081A1

    公开(公告)日：2006-01-26

    申请号：US10899610

    申请日：2004-07-26

    申请人： JiJun Sun ,  Renu Dave ,  Jon Slaughter ,  Johan Akerman

    发明人： JiJun Sun ,  Renu Dave ,  Jon Slaughter ,  Johan Akerman

    IPC分类号： H01L29/94

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/132 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12

    摘要： Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer. Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.

    摘要翻译： 提供磁隧道结（“MTJ”）元件结构和制造MTJ元件结构的方法。 MTJ元件结构可以包括结晶钉扎层，非晶固定层和设置在结晶钉扎层和非晶固定层之间的耦合层。 非晶固定层与结晶钉扎层反铁磁耦合。 MTJ元件还包括设置在非晶固定层和自由层之间的自由层和隧道势垒层。 另一MTJ元件结构可以包括被钉扎层，固定层和设置在它们之间的非磁性耦合层。 隧道势垒层设置在固定层和自由层之间。 界面层邻近隧道势垒层和非晶材料层设置。 第一界面层包括具有比无定形材料高的自旋极化的材料。

    Low power magnetoelectronic device structures utilizing enhanced permeability materials
    10.
    发明授权
    Low power magnetoelectronic device structures utilizing enhanced permeability materials 有权
    利用增强的渗透性材料的低功率磁电子器件结构

    公开(公告)号：US07285835B2

    公开(公告)日：2007-10-23

    申请号：US11066884

    申请日：2005-02-24

    申请人： Nicholas D. Rizzo ,  Renu Dave ,  Jon M. Slaughter ,  Srinivas V. Pietambaram

    发明人： Nicholas D. Rizzo ,  Renu Dave ,  Jon M. Slaughter ,  Srinivas V. Pietambaram

    IPC分类号： H01L43/00

    CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10S977/838 ,  Y10S977/933

    摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.

    摘要翻译： 提供了低功率磁电子器件结构及其制造方法。 一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。 增强的导电介电材料具有不小于约1.5的渗透性。 还提供了一种制造磁电子器件结构的方法。 该方法包括制造磁电子器件（102）并沉积导线（104）。 形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于 磁电子器件。