- 专利标题： Manufacturing method of semiconductor device with filling insulating film into trench
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申请号： US11395134申请日： 2006-04-03
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公开(公告)号： US20060189092A1公开(公告)日： 2006-08-24
- 发明人: Atsuhiro Sato , Masayuki Ichige , Seiichi Mori , Yuji Takeuchi , Hiroaki Hazama , Yukio Nishiyama , Hirotaka Ogihara , Naruhiko Kaji
- 申请人： Atsuhiro Sato , Masayuki Ichige , Seiichi Mori , Yuji Takeuchi , Hiroaki Hazama , Yukio Nishiyama , Hirotaka Ogihara , Naruhiko Kaji
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2001-286754 20010920
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.
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