公开(公告)号：US07371654B2

公开(公告)日：2008-05-13

申请号：US11395134

申请日：2006-04-03

申请人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

发明人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.

摘要翻译： 根据HDP技术，在形成在半导体衬底的表面上或上方的沟槽的内表面上开始形成第一氧化硅膜。 然后，第一氧化硅膜的沉积在沟槽的开口闭合之前停止。 此外，蚀刻沉积在开口附近的第一氧化硅膜，并且根据HDP技术在沉积在沟槽底部的第一氧化硅膜上形成第二氧化硅膜。 以这种方式，第一和第二氧化硅膜可以层压在沟槽的底部。

公开(公告)号：US20060189092A1

公开(公告)日：2006-08-24

申请号：US11395134

申请日：2006-04-03

申请人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

发明人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.

公开(公告)号：US06798038B2

公开(公告)日：2004-09-28

申请号：US10140941

申请日：2002-05-09

申请人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

发明人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

IPC分类号： H01L2900

CPC分类号： H01L21/76224

摘要： Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.

摘要翻译： 根据HDP技术，在形成在半导体衬底的表面上或上方的沟槽的内表面上开始形成第一氧化硅膜。 然后，第一氧化硅膜的沉积在沟槽的开口闭合之前停止。 此外，蚀刻沉积在开口附近的第一氧化硅膜，并且根据HDP技术在沉积在沟槽底部的第一氧化硅膜上形成第二氧化硅膜。 以这种方式，第一和第二氧化硅膜可以层压在沟槽的底部。

公开(公告)号：US20050191811A1

公开(公告)日：2005-09-01

申请号：US11067640

申请日：2005-02-28

申请人： Hirotaka Ogihara ,  Yukio Nishiyama ,  Akio Ui ,  Takashi O

发明人： Hirotaka Ogihara ,  Yukio Nishiyama ,  Akio Ui ,  Takashi O

IPC分类号： H01L21/31 ,  C23C16/458 ,  C23C16/509 ,  H01L21/00 ,  H01L21/336 ,  H01L21/687 ,  H01L29/06

CPC分类号： H01L21/68757 ,  C23C16/4585 ,  C23C16/5093 ,  H01J37/32633 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/68735 ,  H01L29/0661

摘要： There is here disclosed a film forming ring comprising a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.

摘要翻译： 这里公开了一种成膜环，其包括由绝缘材料制成的环形主体，并且沿着基板的边缘形成为环状，在该边缘上施加以等离子体状态的原料气体的成膜工艺，以及 环形主体的内缘形成得比其外侧部分高。

公开(公告)号：US07052971B2

公开(公告)日：2006-05-30

申请号：US10193143

申请日：2002-07-12

申请人： Yukio Nishiyama ,  Hirotaka Ogihara ,  Rempei Nakata

发明人： Yukio Nishiyama ,  Hirotaka Ogihara ,  Rempei Nakata

IPC分类号： H01L21/762

CPC分类号： H01L21/76802 ,  H01L21/31055 ,  H01L21/3125 ,  H01L21/76224 ,  H01L21/76831 ,  H01L21/76837

摘要： A method for manufacturing a semiconductor device of the present invention includes, forming a first silicon oxide film by HDP-CVD so as to bury a recess portion in a three-dimensional portion formed in a surface region of a semiconductor workpiece to a position lower than an upper surface of the recess portion, and forming a second silicon oxide film by SOG on the first silicon oxide film so as to fill the recess portion.

公开(公告)号：US07247888B2

公开(公告)日：2007-07-24

申请号：US11067640

申请日：2005-02-28

申请人： Hirotaka Ogihara ,  Yukio Nishiyama ,  Akio Ui ,  Takashi O

发明人： Hirotaka Ogihara ,  Yukio Nishiyama ,  Akio Ui ,  Takashi O

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L21/68757 ,  C23C16/4585 ,  C23C16/5093 ,  H01J37/32633 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/68735 ,  H01L29/0661

摘要： There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.

摘要翻译： 这里公开了一种成膜环，其包括环形主体，该环形主体由绝缘材料制成并且沿着基板的边缘形成为环状，在该边缘上施加以等离子体状态的原料气体的成膜工艺，以及 环形主体的内缘形成得比其外侧部分高。

公开(公告)号：US20130126995A1

公开(公告)日：2013-05-23

申请号：US13420318

申请日：2012-03-14

申请人： Hirotaka Ogihara

发明人： Hirotaka Ogihara

IPC分类号： H01L29/82 ,  H01L21/8246

CPC分类号： H01L27/222 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a semiconductor substrate device includes a plurality of memory elements formed on the top surface of a semiconductor substrate, interlayer insulating films buried between the adjacent memory elements, a protection film formed on sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements, and contacts formed in the interlayer insulating films. The protection film includes a first protection film formed on the sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements and a second protection film formed on the first protection film. The first protection film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, and the second protection film is made of a boron film or a boron nitride film.

摘要翻译： 根据一个实施例，半导体衬底器件包括形成在半导体衬底的顶表面上的多个存储元件，掩埋在相邻存储元件之间的层间绝缘膜，形成在每个存储元件和顶部的侧面上的保护膜 在相邻的存储元件之间的半导体衬底的表面和形成在层间绝缘膜中的触点。 保护膜包括形成在每个存储元件的侧面上的第一保护膜和在相邻存储元件之间的半导体衬底的顶表面和形成在第一保护膜上的第二保护膜。 第一保护膜由氧化硅膜，氮化硅膜或氧氮化硅膜构成，第二保护膜由硼膜或氮化硼膜构成。

公开(公告)号：US08956982B2

公开(公告)日：2015-02-17

申请号：US13300262

申请日：2011-11-18

申请人： Shuichi Tsubata ,  Hirotaka Ogihara

发明人： Shuichi Tsubata ,  Hirotaka Ogihara

IPC分类号： H01L21/31 ,  H01L21/033 ,  H01L27/10 ,  H01L45/00 ,  H01L27/24

CPC分类号： H01L21/0332 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

摘要： According to one embodiment, a stacked film including at least a silicon oxide film is formed by stacking a plurality of films formed of different materials and a hard mask pattern is formed on the stacked film. Then, a stacked film pattern of a predetermined shape is formed by performing anisotropic etching on the stacked film by using the hard mask pattern as an etching mask and the hard mask pattern is removed. The hard mask pattern is formed by stacking at least one first hard mask layer and at least one second hard mask layer. The first hard mask layer is formed of a material having a higher removability in wet etching than the second hard mask layer. The first hard mask layer is arranged immediately above the stacked film.

摘要翻译： 根据一个实施例，通过堆叠由不同材料形成的多个膜来形成至少包括氧化硅膜的堆叠膜，并且在堆叠膜上形成硬掩模图案。 然后，通过使用硬掩模图案作为蚀刻掩模对叠层膜进行各向异性蚀刻来形成预定形状的堆叠膜图案，并且去除硬掩模图案。 硬掩模图案通过堆叠至少一个第一硬掩模层和至少一个第二硬掩模层而形成。 第一硬掩模层由在湿蚀刻中具有比第二硬掩模层更高的可移除性的材料形成。 第一硬掩模层布置在堆叠膜的正上方。

公开(公告)号：US20120244712A1

公开(公告)日：2012-09-27

申请号：US13300262

申请日：2011-11-18

申请人： Shuichi TSUBATA ,  Hirotaka Ogihara

发明人： Shuichi TSUBATA ,  Hirotaka Ogihara

IPC分类号： H01L21/3065

CPC分类号： H01L21/0332 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

摘要： According to one embodiment, a stacked film including at least a silicon oxide film is formed by stacking a plurality of films formed of different materials and a hard mask pattern is formed on the stacked film. Then, a stacked film pattern of a predetermined shape is formed by performing anisotropic etching on the stacked film by using the hard mask pattern as an etching mask and the hard mask pattern is removed. The hard mask pattern is formed by stacking at least one first hard mask layer and at least one second hard mask layer. The first hard mask layer is formed of a material having a higher removability in wet etching than the second hard mask layer. The first hard mask layer is arranged immediately above the stacked film.

摘要翻译： 根据一个实施例，通过堆叠由不同材料形成的多个膜来形成至少包括氧化硅膜的堆叠膜，并且在堆叠膜上形成硬掩模图案。 然后，通过使用硬掩模图案作为蚀刻掩模对叠层膜进行各向异性蚀刻来形成预定形状的堆叠膜图案，并且去除硬掩模图案。 硬掩模图案通过堆叠至少一个第一硬掩模层和至少一个第二硬掩模层而形成。 第一硬掩模层由在湿蚀刻中具有比第二硬掩模层更高的可移除性的材料形成。 第一硬掩模层布置在堆叠膜的正上方。

公开(公告)号：US08796814B2

公开(公告)日：2014-08-05

申请号：US13420318

申请日：2012-03-14

申请人： Hirotaka Ogihara

发明人： Hirotaka Ogihara

IPC分类号： H01L29/82 ,  H01L21/8246

CPC分类号： H01L27/222 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a semiconductor substrate device includes a plurality of memory elements formed on the top surface of a semiconductor substrate, interlayer insulating films buried between the adjacent memory elements, a protection film formed on sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements, and contacts formed in the interlayer insulating films. The protection film includes a first protection film formed on the sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements and a second protection film formed on the first protection film. The first protection film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, and the second protection film is made of a boron film or a boron nitride film.

摘要翻译： 根据一个实施例，半导体衬底器件包括形成在半导体衬底的顶表面上的多个存储元件，掩埋在相邻存储元件之间的层间绝缘膜，形成在每个存储元件和顶部的侧面上的保护膜 在相邻的存储元件之间的半导体衬底的表面和形成在层间绝缘膜中的触点。 保护膜包括形成在每个存储元件的侧面上的第一保护膜和在相邻存储元件之间的半导体衬底的顶表面和形成在第一保护膜上的第二保护膜。 第一保护膜由氧化硅膜，氮化硅膜或氧氮化硅膜构成，第二保护膜由硼膜或氮化硼膜构成。