发明申请
- 专利标题： High density plasma CVD chamber
- 专利标题（中）： 高密度等离子体CVD室
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申请号： US11414049申请日： 2006-04-27
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公开(公告)号： US20060191478A1公开(公告)日： 2006-08-31
- 发明人: Sudhir Gondhalekar , Tom Cho , Rolf Guenther , Shigeru Takehiro , Masayoshi Nohira , Tetsuya Ishikawa , Ndanka Mukuti
- 申请人： Sudhir Gondhalekar , Tom Cho , Rolf Guenther , Shigeru Takehiro , Masayoshi Nohira , Tetsuya Ishikawa , Ndanka Mukuti
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is typically at least about 0.15, more desirably about 0.2-0.25.
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