High density plasma CVD chamber
    1.
    发明申请
    High density plasma CVD chamber 审中-公开
    高密度等离子体CVD室

    公开(公告)号:US20060191478A1

    公开(公告)日:2006-08-31

    申请号:US11414049

    申请日:2006-04-27

    IPC分类号: C23C16/00

    摘要: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is typically at least about 0.15, more desirably about 0.2-0.25.

    摘要翻译: 本发明涉及等离子体化学气相沉积室的设计,其提供了在基底上形成薄的CVD膜的更均匀的条件。 在一个实施例中,用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部,侧壁和设置在侧壁顶部的圆顶。 圆顶具有圆顶,并具有限定腔直径的侧部。 顶部RF线圈设置在圆顶顶部上方。 侧面RF线圈邻近圆顶的侧部设置。 侧RF线圈通过线圈分离与顶部RF线圈间隔开。 线圈分离与室直径的比率通常为至少约0.15,更期望为约0.2-0.25。

    APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO UV RADIATION WHILE MONITORING DETERIORATION OF THE UV SOURCE AND REFLECTORS
    2.
    发明申请
    APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO UV RADIATION WHILE MONITORING DETERIORATION OF THE UV SOURCE AND REFLECTORS 有权
    用于在紫外线源和反射器的监测下,将基底暴露于紫外线辐射的装置和方法

    公开(公告)号:US20070228289A1

    公开(公告)日:2007-10-04

    申请号:US11686897

    申请日:2007-03-15

    IPC分类号: G21G5/00

    摘要: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

    摘要翻译: 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外(UV)固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件,适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯,所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器,其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案,其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。