公开(公告)号：US20050263072A1

公开(公告)日：2005-12-01

申请号：US11130554

申请日：2005-05-16

Applicant: Ganesh Balasubramanian ,  Juan Rocha-Alvarez ,  Tom Cho ,  Daemian Raj

Inventor： Ganesh Balasubramanian ,  Juan Rocha-Alvarez ,  Tom Cho ,  Daemian Raj

IPC: C23C16/00 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4405 ,  C23C16/45565 ,  C23C16/45574

Abstract: Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate with sufficient pressure drop to more evenly distribute the gases prior to passing through the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

Abstract translation: 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道以足够的压降将阻塞板中的多个孔中的第一气体输送，以在通过气体分布板之前更均匀地分布气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。

公开(公告)号：US5885356A

公开(公告)日：1999-03-23

申请号：US577862

申请日：1995-12-22

Applicant: Jun Zhao ,  Tom Cho ,  Xin Sheng Guo ,  Atsushi Tabata ,  Jianmin Qiao ,  Alex Schreiber

Inventor： Jun Zhao ,  Tom Cho ,  Xin Sheng Guo ,  Atsushi Tabata ,  Jianmin Qiao ,  Alex Schreiber

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H01L21/687 ,  C23C16/00 ,  B44C1/22

CPC classification number: H01J37/32834 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/4586 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S156/916

Abstract: The present invention provides a method and apparatus for limiting residue build-up by lining with a ceramic material the exhaust plenun and exhaust manifold of a processing chamber. In another aspect of the invention, the inventors have used an air gap between the ceramic liner and the processing chamber walls to increase the dielectric value of the ceramic liner, and further inhibit the build-up of residues. In another aspect, the ceramic liner has been found to retain sufficient heat to allow the elimination of heaters typically used to heat the aluminum walls during a clean operation, if the clean operation is commenced immediately after a process step so that the ceramic retains the necessary heat from the previous processing step. The provision of an air gap aids in this heating, preventing the ceramic heat from being drawn off by direct contact with the aluminum walls. In a preferred embodiment, the ceramic liners are attached to the chamber walls with TEFLON.RTM. (polytetrafluoroethylene) screws.

Abstract translation: 本发明提供了一种用于通过用陶瓷材料衬里处理室的排气增压和排气歧管来限制残余物堆积的方法和装置。 在本发明的另一方面，本发明人已经在陶瓷衬垫和处理室壁之间使用气隙来增加陶瓷衬里的介电值，并进一步抑制残留物的积聚。 在另一方面，已经发现陶瓷衬垫保持足够的热量，以便在清洁操作期间消除通常用于加热铝壁的加热器，如果在工艺步骤之后立即开始清洁操作，使得陶瓷保留必要的 来自前一处理步骤的热量。 提供气隙有助于这种加热，从而防止陶瓷热量与铝壁直接接触而被吸走。 在一个优选实施例中，陶瓷衬垫用TEFLON TM（聚四氟乙烯）螺钉连接到室壁。

公开(公告)号：US5853607A

公开(公告)日：1998-12-29

申请号：US540812

申请日：1995-10-11

Applicant: Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

Inventor： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  A62C1/00 ,  A62D1/00

CPC classification number: C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

Abstract: A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

Abstract translation: 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

公开(公告)号：US5558717A

公开(公告)日：1996-09-24

申请号：US348273

申请日：1994-11-30

Applicant: Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

Inventor： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

CPC classification number: C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

Abstract: A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

Abstract translation: 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

公开(公告)号：US20070286963A1

公开(公告)日：2007-12-13

申请号：US11686881

申请日：2007-03-15

Applicant: Juan Rocha-Alvarez ,  Thomas Nowak ,  Dale Du Bois ,  Sanjeev Baluja ,  Scott Hendrickson ,  Dustin Ho ,  Andrzei Kaszuba ,  Tom Cho

Inventor： Juan Rocha-Alvarez ,  Thomas Nowak ,  Dale Du Bois ,  Sanjeev Baluja ,  Scott Hendrickson ,  Dustin Ho ,  Andrzei Kaszuba ,  Tom Cho

IPC: C08F2/48 ,  B01J19/08

CPC classification number: B05D3/0209 ,  B05D3/0493 ,  B05D3/067 ,  H01L21/31058 ,  H01L21/67115

Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

Abstract translation: 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US20070257205A1

公开(公告)日：2007-11-08

申请号：US11686878

申请日：2007-03-15

Applicant: Juan Rocha-Alvarez ,  Thomas Nowak ,  Dale Du Bois ,  Sanjeev Baluja ,  Scott Hendrickson ,  Dustin Ho ,  Andrzei Kaszuba ,  Tom Cho

Inventor： Juan Rocha-Alvarez ,  Thomas Nowak ,  Dale Du Bois ,  Sanjeev Baluja ,  Scott Hendrickson ,  Dustin Ho ,  Andrzei Kaszuba ,  Tom Cho

IPC: B01J19/08

CPC classification number: B05D3/067

Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

Abstract translation: 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US20070048446A1

公开(公告)日：2007-03-01

申请号：US11552129

申请日：2006-10-23

Applicant: Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh Pham ,  Zhong Hua

Inventor： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh Pham ,  Zhong Hua

IPC: C23C16/00 ,  B05D3/00

CPC classification number: H01L21/67017 ,  H01L21/67109

Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

Abstract translation: 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

公开(公告)号：US07663121B2

公开(公告)日：2010-02-16

申请号：US11424368

申请日：2006-06-15

Applicant: Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Andrzej Kaszuba ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Sanjeev Baluja ,  Tom Cho ,  Josephine Chang ,  Hichem M'Saad

Inventor： Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Andrzej Kaszuba ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Sanjeev Baluja ,  Tom Cho ,  Josephine Chang ,  Hichem M'Saad

IPC: G01N23/00

CPC classification number: B05D3/067 ,  B05D3/0209 ,  B05D3/0493 ,  H01L21/31058

Abstract: An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

Abstract translation: 紫外线（UV）固化室可固化设置在基底上的电介质材料并进行原位清洁。 串联处理室提供由覆盖有盖的主体限定的两个单独的和相邻的过程区域，所述盖子具有分别位于每个处理区域上方的窗口。 每个处理区域的一个或多个UV灯泡被耦合到盖的壳体覆盖，将通过窗口的UV光发射到位于处理区域内的衬底上。 UV灯泡可以是利用诸如微波或射频的源的发光二极管或灯泡阵列。 紫外光可以在固化过程中被脉冲。 使用远程生成的氧自由基/臭氧和/或原位实现清洁室。 灯阵列的使用，基板和灯头的相对运动以及灯反射器形状和/或位置的实时修改可以增强基板照明的均匀性。

公开(公告)号：US20080067425A1

公开(公告)日：2008-03-20

申请号：US11686900

申请日：2007-03-15

Applicant: Andrzei Kaszuba ,  Juan Rocha-Alvarez ,  Sanjeev Baluja ,  Tom Cho ,  Hichem M'Saad ,  Scott Hendrickson ,  Dustin Ho ,  Thomas Nowak

Inventor： Andrzei Kaszuba ,  Juan Rocha-Alvarez ,  Sanjeev Baluja ,  Tom Cho ,  Hichem M'Saad ,  Scott Hendrickson ,  Dustin Ho ,  Thomas Nowak

IPC: G21K5/00

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067 ,  H01L21/67115

Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

Abstract translation: 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US20060251827A1

公开(公告)日：2006-11-09

申请号：US11124908

申请日：2005-05-09

Applicant: Thomas Nowak ,  Juan Rocha-Alvarez ,  Andrzej Kaszuba ,  Scott Hendrickson ,  Dustin Ho ,  Sanjeev Baluja ,  Tom Cho ,  Josephine Chang ,  Hichem M'Saad

Inventor： Thomas Nowak ,  Juan Rocha-Alvarez ,  Andrzej Kaszuba ,  Scott Hendrickson ,  Dustin Ho ,  Sanjeev Baluja ,  Tom Cho ,  Josephine Chang ,  Hichem M'Saad

IPC: B05D3/06 ,  B05B5/00

CPC classification number: B05D3/067 ,  B05D3/0209 ,  B05D3/0493 ,  H01L21/31058

Abstract: An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

Abstract translation: 紫外线（UV）固化室可固化设置在基底上的电介质材料并进行原位清洁。 串联处理室提供由覆盖有盖的主体限定的两个单独的和相邻的过程区域，所述盖子具有分别位于每个处理区域上方的窗口。 每个处理区域的一个或多个UV灯泡被耦合到盖的壳体覆盖，将通过窗口的UV光发射到位于处理区域内的衬底上。 UV灯泡可以是利用诸如微波或射频的源的发光二极管或灯泡阵列。 紫外光可以在固化过程中被脉冲。 使用远程生成的氧自由基/臭氧和/或原位实现清洁室。 灯阵列的使用，基板和灯头的相对运动以及灯反射器形状和/或位置的实时修改可以增强基板照明的均匀性。