- 专利标题: Methods and apparatuses for electrochemical deposition
-
申请号: US11072137申请日: 2005-03-04
-
公开(公告)号: US20060196775A1公开(公告)日: 2006-09-07
- 发明人: Hung-Wen Su , Ming-Hsing Tsai
- 申请人: Hung-Wen Su , Ming-Hsing Tsai
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号: C25D3/00
- IPC分类号: C25D3/00 ; C25D17/04
摘要:
Methods and apparatuses for electrochemically depositing a metal layer onto a substrate. An electrochemical deposition apparatus comprises a substrate holder assembly including a substrate chuck and a relatively soft cathode contact ring. The cathode contact ring comprises an inner portion and an outer portion, wherein the inner portion directly contacts the substrate. An anode is disposed in an electrolyte container. A power supply connects the substrate holder assembly and the anode.
公开/授权文献
- US07597787B2 Methods and apparatuses for electrochemical deposition 公开/授权日:2009-10-06
信息查询