发明申请
US20060205193A1 Method for forming SiC-based film and method for fabricating semiconductor device
审中-公开
用于形成SiC基膜的方法和用于制造半导体器件的方法
- 专利标题： Method for forming SiC-based film and method for fabricating semiconductor device
- 专利标题（中）： 用于形成SiC基膜的方法和用于制造半导体器件的方法
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申请号： US11220591申请日： 2005-09-08
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公开(公告)号： US20060205193A1公开(公告)日： 2006-09-14
- 发明人: Ken Sugimoto , Yoshiyuki Ohkura , Hirofumi Watatani , Tamotsu Owada , Kengo Inoue
- 申请人： Ken Sugimoto , Yoshiyuki Ohkura , Hirofumi Watatani , Tamotsu Owada , Kengo Inoue
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2005-065432 20050309
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; H01L21/42
摘要：
The method for forming an SiC-based film comprises the step of generating NH3 plasma on the surface of a substrate 20 in a chamber to make NH3 plasma processing on the substrate 20, the step of removing reaction products containing nitrogen remaining in the chamber, and the step of forming an SiC film 34 on the substrate 20 by PECVD.
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