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1.发明申请Method for forming SiC-based film and method for fabricating semiconductor device 审中-公开用于形成SiC基膜的方法和用于制造半导体器件的方法公开(公告)号：US20060205193A1
公开(公告)日：2006-09-14
申请号：US11220591
申请日：2005-09-08
CPC分类号： H01L21/02167 , C23C16/0227 , C23C16/325 , H01L21/3148 , H01L21/76807 , H01L21/76834 , H01L21/76835 , H01L21/76849 , H01L21/76867
摘要： The method for forming an SiC-based film comprises the step of generating NH3 plasma on the surface of a substrate 20 in a chamber to make NH3 plasma processing on the substrate 20, the step of removing reaction products containing nitrogen remaining in the chamber, and the step of forming an SiC film 34 on the substrate 20 by PECVD.
摘要翻译： 形成SiC基膜的方法包括在室中的衬底20的表面上产生NH 3等离子体以在衬底上进行NH 3等离子体处理的步骤 20，除去残留在室内的含有氮的反应产物的步骤，以及通过PECVD在基板20上形成SiC膜34的步骤。
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公开(公告)号：US07749897B2
公开(公告)日：2010-07-06
申请号：US12219271
申请日：2008-07-18
IPC分类号： H01L21/4763
CPC分类号： H01L21/76829 , H01L21/76808
摘要： A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH4 gas and CO2 gas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.
摘要翻译： 公开了一种制造包括垂直布线部分的布线结构的半导体器件的方法。 该方法包括在布线层上形成由低介电常数材料制成的层间绝缘膜的步骤，通过在层间绝缘膜上使用SiH 4气体和CO 2气体通过CVD形成氧化硅膜的步骤，形成 化学放大抗蚀剂膜覆盖氧化硅膜，以及在要形成垂直布线部分的化学放大抗蚀剂膜上的位置形成第一开口的步骤。
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公开(公告)号：US20070123035A1
公开(公告)日：2007-05-31
申请号：US11358715
申请日：2006-02-22
IPC分类号： H01L21/4763 , H01L21/473
CPC分类号： H01L21/76829 , H01L21/76808
摘要： A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH4 gas and CO2 gas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.
摘要翻译： 公开了一种制造包括垂直布线部分的布线结构的半导体器件的方法。 该方法包括在布线层上形成由低介电常数材料制成的层间绝缘膜的步骤，使用SiH 4气体和CO 2通过CVD形成氧化硅膜的步骤 层间绝缘膜上的气体，形成化学放大抗蚀剂膜以覆盖氧化硅膜的步骤，以及在化学放大型抗蚀剂膜上形成第一开口的步骤，其中垂直布线部分为 要形成
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公开(公告)号：US20080305645A1
公开(公告)日：2008-12-11
申请号：US12219271
申请日：2008-07-18
IPC分类号： H01L21/302
CPC分类号： H01L21/76829 , H01L21/76808
摘要： A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH4 gas and CO2 gas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.
摘要翻译： 公开了一种制造包括垂直布线部分的布线结构的半导体器件的方法。 该方法包括在布线层上形成由低介电常数材料制成的层间绝缘膜的步骤，通过在层间绝缘膜上使用SiH 4气体和CO 2气体通过CVD形成氧化硅膜的步骤，形成 化学放大抗蚀剂膜覆盖氧化硅膜，以及在要形成垂直布线部分的化学放大抗蚀剂膜上的位置形成第一开口的步骤。
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5.发明授权Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device 有权能够提高碳化硅膜等的粘附性的半导体装置的绝缘膜形成方法公开(公告)号：US07208405B2
公开(公告)日：2007-04-24
申请号：US10899045
申请日：2004-07-27
IPC分类号： H01L21/4763 , H01L21/302 , H01L21/461 , H01L21/31
CPC分类号： H01L21/76829 , H01L21/76807 , H01L21/76826 , H01L21/76832 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L24/05 , H01L2224/02166 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.
摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。
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6.发明申请Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device 有权能够提高碳化硅膜等的粘附性的半导体装置的绝缘膜形成方法公开(公告)号：US20050242440A1
公开(公告)日：2005-11-03
申请号：US10899045
申请日：2004-07-27
IPC分类号： H01L23/522 , H01L21/314 , H01L21/768 , H01L23/48 , H01L23/532
CPC分类号： H01L21/76829 , H01L21/76807 , H01L21/76826 , H01L21/76832 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L24/05 , H01L2224/02166 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.
摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。
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7.发明授权Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device 有权能够提高碳化硅膜等的粘附性的半导体装置的绝缘膜形成方法公开(公告)号：US07642185B2
公开(公告)日：2010-01-05
申请号：US11724219
申请日：2007-03-15
IPC分类号： H01L21/4763
CPC分类号： H01L21/76829 , H01L21/76807 , H01L21/76826 , H01L21/76832 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L24/05 , H01L2224/02166 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.
摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。
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公开(公告)号：US20070173054A1
公开(公告)日：2007-07-26
申请号：US11724219
申请日：2007-03-15
IPC分类号： H01L21/4763
CPC分类号： H01L21/76829 , H01L21/76807 , H01L21/76826 , H01L21/76832 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L24/05 , H01L2224/02166 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.
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9.发明申请Semiconductor device using low-K material as interlayer insulating film and its manufacture method 有权使用低K材料作为层间绝缘膜的半导体器件及其制造方法公开(公告)号：US20050250309A1
公开(公告)日：2005-11-10
申请号：US11179550
申请日：2005-07-13
申请人： Shun-ichi Fukuyama , Tamotsu Owada , Hiroko Inoue , Ken Sugimoto
发明人： Shun-ichi Fukuyama , Tamotsu Owada , Hiroko Inoue , Ken Sugimoto
IPC分类号： H01L21/768 , H01L23/31 , H01L23/522 , H01L23/532 , H01L21/4763
CPC分类号： H01L23/3171 , H01L21/76801 , H01L21/76807 , H01L23/3192 , H01L23/53238 , H01L2924/0002 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering the semiconductor element. A second insulating film is formed over the first insulating film, the second insulating film having a dielectric constant lower than that of the first insulating film. A first wiring pattern is formed over the second insulating film. A conductive connection member buried in the second and first insulating films electrically interconnects the first wiring pattern and semiconductor element.
摘要翻译： 半导体元件形成在半导体衬底的表面上。 第一绝缘膜形成在半导体衬底的表面上，第一绝缘膜覆盖半导体元件。 在第一绝缘膜上形成第二绝缘膜，第二绝缘膜的介电常数低于第一绝缘膜的介电常数。 在第二绝缘膜上形成第一布线图案。 埋在第二和第一绝缘膜中的导电连接构件将第一布线图案和半导体元件电连接。
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公开(公告)号：US20060087041A1
公开(公告)日：2006-04-27
申请号：US11256681
申请日：2005-10-24
申请人： Shun-ichi Fukuyama , Tamotsu Owada , Hiroko Inoue , Ken Sugimoto
发明人： Shun-ichi Fukuyama , Tamotsu Owada , Hiroko Inoue , Ken Sugimoto
IPC分类号： H01L23/48
CPC分类号： H01L23/5329 , H01L21/76801 , H01L21/76807 , H01L21/76835 , H01L23/5222 , H01L23/5226 , H01L23/53295 , H01L2221/1036 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device is disclosed that includes a substrate, a first wiring structure arranged on the substrate which first wiring structure includes a first insulating layer and a first wiring layer arranged within the first insulating layer, a second wiring structure arranged on the first wiring structure which second wiring structure includes a second insulating layer including a shock absorbing layer made of an insulating film and a second wiring layer arranged within the second insulating layer, and a third wiring structure arranged on the second wiring structure which third wiring structure includes a third insulating layer and a third wiring layer arranged within the third insulating layer. The fracture toughness value of the shock absorbing layer is arranged to be greater than the fracture toughness value of the first insulating film and the fracture toughness value of the third insulating film.
摘要翻译： 公开了一种半导体器件，其包括基板，布置在基板上的第一布线结构，第一布线结构包括第一绝缘层和布置在第一绝缘层内的第一布线层，布置在第一布线结构上的第二布线结构， 第二布线结构包括：第二绝缘层，包括由绝缘膜制成的减震层和布置在第二绝缘层内的第二布线层;以及布置在第二布线结构上的第三布线结构，第三布线结构包括第三绝缘层 以及布置在所述第三绝缘层内的第三布线层。 冲击吸收层的断裂韧性值被设置为大于第一绝缘膜的断裂韧性值和第三绝缘膜的断裂韧性值。
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