发明申请
US20060208325A1 Semiconductor device with gate insulating film and manufacturing method thereof
审中-公开
具有栅极绝缘膜的半导体器件及其制造方法
- 专利标题： Semiconductor device with gate insulating film and manufacturing method thereof
- 专利标题（中）： 具有栅极绝缘膜的半导体器件及其制造方法
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申请号： US11373112申请日： 2006-03-13
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公开(公告)号： US20060208325A1公开(公告)日： 2006-09-21
- 发明人: Masaharu Mizutani , Masao Inoue , Jiro Yugami , Junichi Tsuchimoto , Koji Nomura , Yasuhiro Shimamoto
- 申请人： Masaharu Mizutani , Masao Inoue , Jiro Yugami , Junichi Tsuchimoto , Koji Nomura , Yasuhiro Shimamoto
- 申请人地址： JP Chiyoda-ku
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2005-077498(P) 20050317; JP2006-038918(P) 20060216
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A MISFET includes: a p type substrate having a channel region with an impurity concentration C; an insulating film made of SiO2 and formed on the channel region; and an insulating film made of HfSiON and formed on the gate insulating film. When there is a postulated MISFET including a postulated substrate having a channel region with the impurity concentration C and made of a material identical to the substrate and an insulating film made solely of SiON formed on the channel region, said impurity concentration C of channel region is set so that a maximum value of mobility of electrons in said channel region is higher than a maximum value of mobility of electrons in the postulated channel region. Thus, the power supply voltage can be reduced and the power consumption can be reduced.
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