- 专利标题: Substrate processing apparatus
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申请号: US11391390申请日: 2006-03-29
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公开(公告)号: US20060219171A1公开(公告)日: 2006-10-05
- 发明人: Yoshiaki Sasaki , Yusuke Muraki , Eiichi Nishimura , Yuko Ono
- 申请人: Yoshiaki Sasaki , Yusuke Muraki , Eiichi Nishimura , Yuko Ono
- 申请人地址: JP Minato-ku
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2005-100584 20050331
- 主分类号: C23F1/00
- IPC分类号: C23F1/00 ; H01L21/306 ; C23C16/00
摘要:
In a substrate processing apparatus comprising a processing unit where a specific type of processing is executed on a wafer and a transfer chamber through which a wafer is carried into/out of the processing unit, the transfer chamber includes an air intake unit through which external air is drawn into the transfer chamber, a discharge unit disposed so as to face opposite the air intake unit, through which the discharge gas in the transfer chamber is discharged and a discharge gas filtering means disposed at the discharge unit and constituted with a harmful constituent eliminating filter through which a harmful constituent contained in the discharge gas, at least, is eliminated.
公开/授权文献
- US08353986B2 Substrate processing apparatus 公开/授权日:2013-01-15
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