发明申请
- 专利标题： Semiconductor memory device and method for manufacturing semiconductor device
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申请号： US11441237申请日： 2006-05-26
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公开(公告)号： US20060228899A1公开(公告)日： 2006-10-12
- 发明人: Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
- 申请人： Hiroyuki Nansei , Manabu Nakamura , Kentaro Sera , Masahiko Higashi , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
- 申请人地址： JP Aizuwakamatsu
- 专利权人： FUJITSU AMD SEMICONDUCTOR LIMITED
- 当前专利权人： FUJITSU AMD SEMICONDUCTOR LIMITED
- 当前专利权人地址： JP Aizuwakamatsu
- 优先权： JP2002-256195 20020830
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/336
摘要：
After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.