发明申请
- 专利标题： Method for forming a metal layer in multiple steps
- 专利标题（中）： 多级形成金属层的方法
-
申请号： US11113948申请日： 2005-04-25
-
公开(公告)号： US20060237320A1公开(公告)日： 2006-10-26
- 发明人: K.Y. Lin , Chuan-Ping Hou , Keng-Hong Lin , Po-Jen Shih , S.K. Chen , Chao-Lung Chen , Chen Cheng Chou , Chyi Chern , De-Dui Liao
- 申请人： K.Y. Lin , Chuan-Ping Hou , Keng-Hong Lin , Po-Jen Shih , S.K. Chen , Chao-Lung Chen , Chen Cheng Chou , Chyi Chern , De-Dui Liao
- 专利权人： Taiwan Semiconductor Manufacturing Co.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co.
- 主分类号： C25D5/10
- IPC分类号： C25D5/10
摘要：
A method for forming a metal layer having a predetermined thickness on an underlying material is disclosed. According to the method, the underlying material is electroplated to form the metal layer having a fraction of the predetermined thickness thereon. The step of electroplating is interrupted for a predetermined period of time. The step of electroplating is then resumed to form the metal layer having the predetermined thickness on the underlying material, thereby improving planarity of the metal layer.
信息查询
