发明申请
- 专利标题: Semiconductor die edge reconditioning
- 专利标题(中): 半导体晶片边缘修复
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申请号: US11110283申请日: 2005-04-20
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公开(公告)号: US20060237850A1公开(公告)日: 2006-10-26
- 发明人: Yuan Yuan , Kevin Hess , Chu-Chung Lee , Tu-Anh Tran , Alan Woosley , Donna Woosley
- 申请人: Yuan Yuan , Kevin Hess , Chu-Chung Lee , Tu-Anh Tran , Alan Woosley , Donna Woosley
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
An integrated circuit has a semiconductor substrate and an interconnect layer that mechanically relatively weak and susceptible to cracks and delamination. In the formation of the integrated circuit from a semiconductor wafer, a cut is made through the interconnect layer to form an edge of the interconnect layer. This cut may continue completely through the wafer thickness or stop short of doing so. In either case, after cutting through the interconnect layer, a reconditioning layer is formed on the edge of the interconnect layer. This reconditioning layer seals the existing cracks and delaminations and inhibits the further delamination or cracking of the interconnect layer. The sealing layer may be formed, for example, before the cut through the wafer, after the cut through the wafer but before any packaging, or after performing wirebonding between the interconnect layer and an integrated circuit package.
公开/授权文献
- US07374971B2 Semiconductor die edge reconditioning 公开/授权日:2008-05-20
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