公开(公告)号：US20050122198A1

公开(公告)日：2005-06-09

申请号：US10729531

申请日：2003-12-05

申请人： Yaping Zhou ,  Susan Downey ,  Sheila Chopin ,  Tu-Anh Tran ,  Alan Woosley ,  Peter Harper ,  Perry Pelley

发明人： Yaping Zhou ,  Susan Downey ,  Sheila Chopin ,  Tu-Anh Tran ,  Alan Woosley ,  Peter Harper ,  Perry Pelley

IPC分类号： H01F17/00 ,  H01F41/04 ,  H01L23/522 ,  H01F5/00

CPC分类号： H01F17/0033 ,  H01F41/046 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4813 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3025 ,  Y10T29/4902 ,  H01L2224/45015 ,  H01L2924/207

摘要： An inductive device (105) is formed above a substrate (225) having a conductive coil formed around a core (109). The coil comprises segments formed from a first plurality of bond wires (113) and a second plurality of bond wires (111). The first plurality of bond wires (113) extends between the core (109) and the substrate (225). Each of the first plurality of bond wires is coupled to two of a plurality of wire bond pads (117, 116). The second plurality of bond wires (111) extends over the core (109) and is coupled between two of the plurality of wire bond pads (117, 119). A shield (141) includes a portion that is positioned between the core (109) and the substrate (225).

摘要翻译： 在具有围绕芯（109）形成的导电线圈的衬底（225）上方形成感应器件（105）。 线圈包括由第一多个接合线（113）和第二多个接合线（111）形成的线段。 第一多个接合线（113）在芯（109）和衬底（225）之间延伸。 第一多个接合线中的每一个耦合到多个引线接合焊盘（117,116）中的两个。 所述第二多个接合线（111）在所述芯（109）上方延伸并耦合在所述多个引线接合焊盘（117,119）中的两个之间。 屏蔽（141）包括位于芯（109）和衬底（225）之间的部分。

公开(公告)号：US20060237850A1

公开(公告)日：2006-10-26

申请号：US11110283

申请日：2005-04-20

申请人： Yuan Yuan ,  Kevin Hess ,  Chu-Chung Lee ,  Tu-Anh Tran ,  Alan Woosley ,  Donna Woosley

发明人： Yuan Yuan ,  Kevin Hess ,  Chu-Chung Lee ,  Tu-Anh Tran ,  Alan Woosley ,  Donna Woosley

IPC分类号： H01L23/48

CPC分类号： H01L23/3185 ,  H01L21/78 ,  H01L23/3128 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An integrated circuit has a semiconductor substrate and an interconnect layer that mechanically relatively weak and susceptible to cracks and delamination. In the formation of the integrated circuit from a semiconductor wafer, a cut is made through the interconnect layer to form an edge of the interconnect layer. This cut may continue completely through the wafer thickness or stop short of doing so. In either case, after cutting through the interconnect layer, a reconditioning layer is formed on the edge of the interconnect layer. This reconditioning layer seals the existing cracks and delaminations and inhibits the further delamination or cracking of the interconnect layer. The sealing layer may be formed, for example, before the cut through the wafer, after the cut through the wafer but before any packaging, or after performing wirebonding between the interconnect layer and an integrated circuit package.

摘要翻译： 集成电路具有机械相对较弱并易于产生裂纹和分层的半导体衬底和互连层。 在从半导体晶片形成集成电路的过程中，通过互连层进行切割以形成互连层的边缘。 该切割可以完全延续晶片厚度，或者停止这样做。 在任一情况下，在切穿互连层之后，在互连层的边缘上形成再生层。 该修复层密封现有的裂纹和分层，并且抑制互连层的进一步分层或破裂。 密封层可以例如在经过晶片切割之后，经过晶片切割之后，但在任何包装之前，或者在互连层和集成电路封装之间进行引线键合之后形成。