发明申请
US20060244035A1 Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS
有权
用于CMOS的基于铪氧化物的硅晶体管中的平带电压和阈值电压的稳定性
- 专利标题： Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS
- 专利标题（中）： 用于CMOS的基于铪氧化物的硅晶体管中的平带电压和阈值电压的稳定性
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申请号： US11118521申请日： 2005-04-29
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公开(公告)号： US20060244035A1公开(公告)日： 2006-11-02
- 发明人: Nestor Bojarczuk , Michael Chudzik , Matthew Copel , Supratik Guha , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri
- 申请人： Nestor Bojarczuk , Michael Chudzik , Matthew Copel , Supratik Guha , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
The present invention provides a metal stack structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a Si-containing conductor and a Hf-based dielectric. This present invention stabilizes the flatband voltages and the threshold voltages by introducing a rare earth metal-containing layer into the material stack that introduces, via electronegativity differences, a shift in the threshold voltage to the desired voltage. Specifically, the present invention provides a metal stack comprising a hafnium-based dielectric; a rare earth metal-containing layer located atop of, or within, said hafnium-based dielectric; an electrically conductive capping layer located above said hafnium-based dielectric; and a Si-containing conductor.