发明申请
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11185678申请日: 2005-07-21
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公开(公告)号: US20060273413A1公开(公告)日: 2006-12-07
- 发明人: Motoyuki Sato , Katsuyuki Sekine , Kazuaki Nakajima , Tomohiro Saito , Kazuhiro Eguchi , Atsushi Yagishita
- 申请人: Motoyuki Sato , Katsuyuki Sekine , Kazuaki Nakajima , Tomohiro Saito , Kazuhiro Eguchi , Atsushi Yagishita
- 优先权: JP2005-164179 20050603
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
There are provided: a semiconductor substrate including first and second device regions isolated by device isolation regions; a first gate insulating film of a high-k material formed in the first device region; a first gate electrode formed on the first gate insulating film; first source and drain regions formed at both sides of the first gate electrode in the first device region; a second gate insulating film of a high-k material which is different from the high-k material of the first gate insulating film, the second gate insulating film being formed in the second device region; a second gate electrode formed on the second gate insulating film; and second source and drain regions formed at both sides of the second gate electrode in the second device region.