发明申请
- 专利标题： Semiconductor device and fabrication process thereof
- 专利标题（中）： 半导体器件及其制造工艺
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申请号： US11211103申请日： 2005-08-25
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公开(公告)号： US20060278952A1公开(公告)日： 2006-12-14
- 发明人: Toshifumi Mori , Katsuaki Ookoshi , Takashi Watanabe , Hiroyuki Ohta
- 申请人： Toshifumi Mori , Katsuaki Ookoshi , Takashi Watanabe , Hiroyuki Ohta
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JPPAT.2005-173695 20050614
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/8238
摘要：
There is provided a semiconductor device having a device isolation region of STI structure formed on a silicon substrate so as to define a device region, wherein the device isolation region comprises a device isolation trench formed in the silicon substrate, and a device isolation insulation film filling the device isolation trench. At least a surface part of the device isolation insulation film is formed of an HF-resistant film.
公开/授权文献
- US07678641B2 Semiconductor device and fabrication process thereof 公开/授权日：2010-03-16