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    ORGANIC ELECTROLUMINESCENT DISPLAY APPARATUS
    2.
    发明申请
    ORGANIC ELECTROLUMINESCENT DISPLAY APPARATUS 有权
    有机电致发光显示装置

    公开(公告)号：US20100090592A1

    公开(公告)日：2010-04-15

    申请号：US12573346

    申请日：2009-10-05

    申请人： Satoru Shiobara ,  Toshifumi Mori ,  Kenichi Ikari ,  Koichi Suzuki ,  Akira Tsuboyama

    发明人： Satoru Shiobara ,  Toshifumi Mori ,  Kenichi Ikari ,  Koichi Suzuki ,  Akira Tsuboyama

    IPC分类号： H01J1/62

    CPC分类号： H01L51/5012 ,  H01L27/3211 ,  H01L51/5048 ,  H01L51/5265

    摘要： An organic electroluminescent display apparatus having organic electroluminescent devices each of which is excellent in color reproducibility and has high emission efficiency in which green organic electroluminescent devices each have a delayed fluorescent material and a microcavity, and the hole transport layer of each of the devices has the same thickness as that of the hole transport layer of each of blue organic electroluminescent devices.

    摘要翻译： 一种具有有机电致发光器件的有机电致发光器件，其各自具有优异的色彩再现性，并且具有高发光效率，其中绿色有机电致发光器件各自具有延迟的荧光材料和微腔，并且每个器件的空穴传输层具有 与蓝色有机电致发光器件的每个的空穴传输层的厚度相同。

    Method for minimizing defects in a semiconductor substrate due to ion implantation
    4.
    发明授权
    Method for minimizing defects in a semiconductor substrate due to ion implantation 有权
    由于离子注入使半导体衬底中的缺陷最小化的方法

    公开(公告)号：US08858818B2

    公开(公告)日：2014-10-14

    申请号：US12895730

    申请日：2010-09-30

    申请人： Pushkar Ranade ,  Toshifumi Mori ,  Ken-ichi Okabe ,  Toshiki Miyake

    发明人： Pushkar Ranade ,  Toshifumi Mori ,  Ken-ichi Okabe ,  Toshiki Miyake

    IPC分类号： C23F1/00 ,  C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461 ,  H01L21/265

    CPC分类号： H01L21/26513 ,  H01L21/26506

    摘要： The effects of knock-on oxide in a semiconductor substrate are reduced by providing a semiconductor substrate and forming a thin layer of native oxide on the semiconductor substrate. Ion implantation is performed through the native oxide layer. The native oxide layer reduces the phenomenon of knock-on oxide and oxygen concentration within the semiconductor substrate. Further reduction may be achieved by etching the surface of the semiconductor substrate in order to eliminate a concentration of oxygen at a surface of the semiconductor substrate.

    摘要翻译： 通过提供半导体衬底并在半导体衬底上形成天然氧化物的薄层来减少半导体衬底中的环氧化物的影响。 通过天然氧化物层进行离子注入。 天然氧化物层减少了半导体衬底内的氧化物和氧浓度的现象。 可以通过蚀刻半导体衬底的表面以消除半导体衬底的表面处的氧浓度来实现进一步的还原。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20120083087A1

    公开(公告)日：2012-04-05

    申请号：US13172465

    申请日：2011-06-29

    申请人： Taiji Ema ,  Toshifumi Mori ,  Toshiki Miyake ,  Kenichi Okabe

    发明人： Taiji Ema ,  Toshifumi Mori ,  Toshiki Miyake ,  Kenichi Okabe

    IPC分类号： H01L21/336

    CPC分类号： H01L21/2652 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/823807 ,  H01L21/823892 ,  H01L29/66477

    摘要： A protection film is formed on a semiconductor substrate. Impurity ions are implanted into the semiconductor substrate through the protection film. The impurity is activated to form an impurity layer. The protection film is removed after forming the impurity layer. The semiconductor substrate of a surface portion of the impurity layer is removed after removing the protection film. A semiconductor layer is epitaxially grown above the semiconductor substrate after removing the semiconductor substrate of the surface portion of the impurity layer.

    摘要翻译： 在半导体基板上形成保护膜。 通过保护膜将杂质离子注入到半导体衬底中。 杂质被激活以形成杂质层。 在形成杂质层之后去除保护膜。 去除保护膜后去除杂质层的表面部分的半导体衬底。 在除去杂质层的表面部分的半导体衬底之后，在半导体衬底上方外延生长半导体层。