发明申请
US20060284167A1 Multilayered substrate obtained via wafer bonding for power applications
审中-公开
通过晶片接合获得的多层基板用于电力应用
- 专利标题： Multilayered substrate obtained via wafer bonding for power applications
- 专利标题（中）： 通过晶片接合获得的多层基板用于电力应用
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申请号： US11326439申请日： 2006-01-06
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公开(公告)号： US20060284167A1公开(公告)日： 2006-12-21
- 发明人: Godfrey Augustine , Jeffrey Hartman , Erica Elvey , Paul Tittel
- 申请人： Godfrey Augustine , Jeffrey Hartman , Erica Elvey , Paul Tittel
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L35/24 ; H01L51/00
摘要：
A multi-layer semiconductor device utilizes the good thermal and electrical properties of a polycrystalline substrate with the electrical properties of single crystal film transferred via wafer bonding. The device structure includes a polycrystalline, e.g., silicon carbide substrate, which was polished. A planarization layer of silicon is formed on the surface, followed by chemical mechanical polishing. The substrate is then bonded to either a bulk silicon wafer or a silicon-on-insulator (SOI) wafer. The silicon (SOI) wafer is thinned to the desired thickness.
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