发明申请
- 专利标题: Method for fabricating transistor with thinned channel
- 专利标题(中): 用稀疏通道制造晶体管的方法
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申请号: US11154138申请日: 2005-06-15
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公开(公告)号: US20060286755A1公开(公告)日: 2006-12-21
- 发明人: Justin Brask , Robert Chau , Suman Datta , Mark Doczy , Brian Doyle , Jack Kavalieros , Amlan Majumdar , Matthew Metz , Marko Radosavljevic
- 申请人: Justin Brask , Robert Chau , Suman Datta , Mark Doczy , Brian Doyle , Jack Kavalieros , Amlan Majumdar , Matthew Metz , Marko Radosavljevic
- 主分类号: H01L31/119
- IPC分类号: H01L31/119 ; H01L31/113 ; H01L31/062 ; H01L29/94 ; H01L29/76 ; H01L21/336
摘要:
A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.
公开/授权文献
- US07858481B2 Method for fabricating transistor with thinned channel 公开/授权日:2010-12-28