发明申请
- 专利标题： STORAGE DEVICES FORMED ON PARTIALLY ISOLATED SEMICONDUCTOR SUBSTRATE ISLANDS
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申请号： US11458967申请日： 2006-07-20
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公开(公告)号： US20060292766A1公开(公告)日： 2006-12-28
- 发明人: Fernando Gonzalez , Chandra Mouli , Lyle Jones
- 申请人： Fernando Gonzalez , Chandra Mouli , Lyle Jones
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L29/76
摘要：
A process of making a partial silicon-on-insulator ledge is disclosed. A deep implantation region is created in a substrate. During a lateral cavity etch, the deep implantation region resists etching. The lateral cavity etch acts to partially isolate an active area above the deep implantation region. The deep implantation region is formed at various process stages according to embodiments. An active device is also disclosed that is achieved by the process. A system is also disclosed that uses the active device.
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