发明申请
- 专利标题： Process for forming an electronic device including discontinuous storage elements
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申请号： US11188909申请日： 2005-07-25
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公开(公告)号： US20070020820A1公开(公告)日： 2007-01-25
- 发明人: Gowrishankar L. Chindalore , Cheong M. Hong , Craig T. Swift
- 申请人： Gowrishankar L. Chindalore , Cheong M. Hong , Craig T. Swift
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L21/8232
- IPC分类号： H01L21/8232
摘要：
A process for forming an electronic device can include forming a first set of discontinuous storage elements over a primary surface of a substrate and forming a trench within the substrate. The process can also include forming a second set of discontinuous storage elements within the trench. The process can further include forming a first gate electrode within the trench, wherein a discontinuous storage element lies between the first gate electrode and a wall of the trench. The process can still further include removing a part of the second set of discontinuous storage elements and forming a second gate electrode over the first gate electrode. After forming the second gate electrode, substantially none of the second set of discontinuous storage elements lies along the wall of the trench at an elevation between an upper surface of the first gate electrode and the primary surface of the substrate.
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