发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11527695申请日： 2006-09-27
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公开(公告)号： US20070020896A1公开(公告)日： 2007-01-25
- 发明人: Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
- 申请人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP2002-052727 20020228
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; H01L21/28
摘要：
A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.
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