发明申请
- 专利标题: Vapor phase deposition apparatus and vapor phase deposition method
- 专利标题(中): 气相沉积装置和气相沉积方法
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申请号: US11494674申请日: 2006-07-28
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公开(公告)号: US20070026148A1公开(公告)日: 2007-02-01
- 发明人: Hideki Arai , Hironobu Hirata , Yoshikazu Moriyama , Shinichi Mitani
- 申请人: Hideki Arai , Hironobu Hirata , Yoshikazu Moriyama , Shinichi Mitani
- 专利权人: NuFlare Technology, Inc.
- 当前专利权人: NuFlare Technology, Inc.
- 优先权: JP2005-219943 20050729; JP2005-367484 20051221; JP2006-005523 20060113
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.