公开(公告)号：US20070026148A1

公开(公告)日：2007-02-01

申请号：US11494674

申请日：2006-07-28

申请人： Hideki Arai ,  Hironobu Hirata ,  Yoshikazu Moriyama ,  Shinichi Mitani

发明人： Hideki Arai ,  Hironobu Hirata ,  Yoshikazu Moriyama ,  Shinichi Mitani

IPC分类号： C23C16/00

CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/14

摘要： A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.

摘要翻译： 气相沉积设备包括：室，容纳在腔室中的支撑台，并且在腔室中支撑衬底;提供气体以形成膜并连接到腔室的第一通道;以及第二通道， 气体并连接到腔室，支撑台设置有多个第一突出部分，以相对于衬底在与衬底表面相同的方向上约束基本上水平的运动，并且衬底被支撑在表面上 与基板的背面接触。

公开(公告)号：US20090068851A1

公开(公告)日：2009-03-12

申请号：US12207754

申请日：2008-09-10

申请人： Hironobu Hirata ,  Yoshikazu Moriyama ,  Masayoshi Yajima ,  Shinichi Mitani

发明人： Hironobu Hirata ,  Yoshikazu Moriyama ,  Masayoshi Yajima ,  Shinichi Mitani

IPC分类号： H01L21/31 ,  C23C14/50

CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68764

摘要： A susceptor of the present invention includes an inner susceptor having a diameter smaller than a diameter of a wafer w and a protruding part for placing the wafer w on a surface thereof, and an outer susceptor having an opening in the central portion thereof, a first step section for placing the inner susceptor so as to block the opening and a second step section provided above the first step section for placing the wafer.

摘要翻译： 本发明的感受体包括直径小于晶片w的直径的内基座和用于将晶片w放置在其表面上的突出部分，以及在其中心部分具有开口的外基座，第一 步骤部分，用于放置内部基座以阻挡开口;以及第二台阶部分，设置在第一台阶部分之上用于放置晶片。

公开(公告)号：US20120055406A1

公开(公告)日：2012-03-08

申请号：US13297483

申请日：2011-11-16

申请人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

发明人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

IPC分类号： C23C16/458

CPC分类号： C23C16/481 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/10 ,  C30B29/06 ,  C30B35/00

摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.

摘要翻译： 气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接 所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离 并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

公开(公告)号：US20070204796A1

公开(公告)日：2007-09-06

申请号：US11706971

申请日：2007-02-16

申请人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

发明人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

IPC分类号： C23C16/00

CPC分类号： C23C16/481 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/10 ,  C30B29/06 ,  C30B35/00

摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.

摘要翻译： 气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接 所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离 并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

公开(公告)号：US20100075509A1

公开(公告)日：2010-03-25

申请号：US12563602

申请日：2009-09-21

申请人： Hironobu Hirata ,  Masayoshi Yajima ,  Yoshikazu Moriyama

发明人： Hironobu Hirata ,  Masayoshi Yajima ,  Yoshikazu Moriyama

IPC分类号： H01L21/316 ,  B05C11/00

CPC分类号： H01L21/02299 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/67109 ,  H01L21/67751

摘要： A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.

摘要翻译： 一种半导体器件的制造方法，包括：将晶片装载到反应室中; 将晶片放置在上推轴上; 在将晶片放置在上推轴上的状态下，将晶片的面内温度分布控制为凹陷状态来预热晶片; 在晶片保持处于凹状状态的同时降低上推轴将晶片保持在晶片保持构件上; 将晶片加热至预定温度; 旋转晶片; 并将工艺气体供应到晶片上。

公开(公告)号：US08632634B2

公开(公告)日：2014-01-21

申请号：US12508012

申请日：2009-07-23

申请人： Yoshikazu Moriyama ,  Kunihiko Suzuki ,  Hironobu Hirata

发明人： Yoshikazu Moriyama ,  Kunihiko Suzuki ,  Hironobu Hirata

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45572 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/46 ,  C30B25/14 ,  C30B29/06

摘要： In a coating apparatus, a distributor plate 104 is disposed upstream of a silicon wafer 101 relative to the direction of flow of reactive gas. The distributor plate 104 has therein first through-holes 104a and second through-holes 104b arranged so as not to meet the first through-holes 104a. The reactive gas passes through the first through-holes 104a and flows down toward the silicon wafer 101. Further, a cooling gas passes through the second through-holes 104b.

摘要翻译： 在涂布装置中，分配器板104相对于反应气体的流动方向设置在硅晶片101的上游。 分配板104在其中具有布置成不与第一通孔104a相交的第一通孔104a和第二通孔104b。 反应气体通过第一通孔104a并朝向硅晶片101向下流动。此外，冷却气体通过第二通孔104b。

公开(公告)号：US08460470B2

公开(公告)日：2013-06-11

申请号：US13297483

申请日：2011-11-16

申请人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

发明人： Hironobu Hirata ,  Akira Jyogo ,  Yoshikazu Moriyama

IPC分类号： C23C16/00

CPC分类号： C23C16/481 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/10 ,  C30B29/06 ,  C30B35/00

摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.

摘要翻译： 气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接 所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离 并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

公开(公告)号：US20070023869A1

公开(公告)日：2007-02-01

申请号：US11494649

申请日：2006-07-28

申请人： Hiroshi Furutani ,  Yoshikazu Moriyama ,  Seiichi Nakazawa ,  Kunihiko Suzuki ,  Hideki Arai ,  Satoshi Inada

发明人： Hiroshi Furutani ,  Yoshikazu Moriyama ,  Seiichi Nakazawa ,  Kunihiko Suzuki ,  Hideki Arai ,  Satoshi Inada

IPC分类号： H01L23/58

CPC分类号： C23C16/4585 ,  C30B25/12

摘要： A vapor phase deposition apparatus includes a chamber, a support table disposed in the chamber and adapted to support a substrate in the chamber, a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and a second passage connected to the chamber and adapted to discharge the gas from the chamber. The support table includes a first depressed portion and a second depressed portion formed in a bottom part of the first depressed portion, a bottom face of the second depressed portion for supporting the substrate.

摘要翻译： 气相沉积设备包括：室，设置在室中并适于在室中支撑衬底的支撑台，连接到室的第一通道，并适于向腔室供应气体以在衬底上形成膜;以及 第二通道，其连接到所述室并适于从所述室排放气体。 支撑台包括形成在第一凹部的底部中的第一凹部和第二凹部，第二凹部的底面用于支撑基板。

公开(公告)号：US08796594B2

公开(公告)日：2014-08-05

申请号：US11723028

申请日：2007-03-16

申请人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

发明人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

IPC分类号： H05B1/02 ,  H01L21/67

CPC分类号： H01L21/67103

摘要： A semiconductor manufacturing equipment is provided herein. The semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part integrated with the heater element, a first electrode electrically contacted with and fixed to the first connection part on a first surface of the first electrode, and a second electrode electrically contacted with and fixed to the second connection part on a second surface of the second electrode. The second surface is perpendicular to the direction of the first surface, and the heater element produces heat by applying a voltage between the first electrode and the second electrode.

摘要翻译： 本文提供半导体制造设备。 半导体制造设备包括：加热元件，被配置为加热晶片，第一连接部分和与加热器元件集成的第二连接部分;与第一电极的第一表面电接触并固定到第一连接部分的第一电极 以及与第二电极电连接并固定到第二连接部分的第二电极的第二表面上的第二电极。 第二表面垂直于第一表面的方向，并且加热器元件通过在第一电极和第二电极之间施加电压而产生热量。

公开(公告)号：US20070221657A1

公开(公告)日：2007-09-27

申请号：US11723028

申请日：2007-03-16

申请人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

发明人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

IPC分类号： H05B1/02

CPC分类号： H01L21/67103

摘要： Semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part which are integrated with the heater element, configured to apply voltages to the heater element, a first electrode contacted with and fixed to the first connection part on a first surface of the first electrode configured to be to apply a voltage to the first connection part, a second electrode which is contacted with and fixed to the second connection part on a second surface of the second electrode, configured to apply a voltage to the second connection part, and the second surface is perpendicular to the direction of the first surface.

摘要翻译： 半导体制造设备包括被配置为加热晶片的加热器元件，与加热器元件集成的第一连接部分和第二连接部分，其构造成向加热器元件施加电压，与第一连接接触并固定的第一电极 所述第一电极的第一表面上的部分被配置为向所述第一连接部施加电压;第二电极，所述第二电极在所述第二电极的第二表面上与所述第二连接部分接触并固定， 到第二连接部分，并且第二表面垂直于第一表面的方向。