公开(公告)号：US20070026148A1

公开(公告)日：2007-02-01

申请号：US11494674

申请日：2006-07-28

申请人： Hideki Arai ,  Hironobu Hirata ,  Yoshikazu Moriyama ,  Shinichi Mitani

发明人： Hideki Arai ,  Hironobu Hirata ,  Yoshikazu Moriyama ,  Shinichi Mitani

IPC分类号： C23C16/00

CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/14

摘要： A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.

摘要翻译： 气相沉积设备包括：室，容纳在腔室中的支撑台，并且在腔室中支撑衬底;提供气体以形成膜并连接到腔室的第一通道;以及第二通道， 气体并连接到腔室，支撑台设置有多个第一突出部分，以相对于衬底在与衬底表面相同的方向上约束基本上水平的运动，并且衬底被支撑在表面上 与基板的背面接触。

公开(公告)号：US08257499B2

公开(公告)日：2012-09-04

申请号：US12030058

申请日：2008-02-12

申请人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45589 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4585

摘要： A vapor phase deposition apparatus includes: a chamber, a supply unit configured to supply a raw gas into the chamber, a support table disposed in the chamber and configured to support a substrate in the chamber, a rotatable bladed wheel configured to have a plurality of blades, to be arranged to surround the support table, and to discharge the raw gas from above the substrate, and a exhaust unit configured to exhaust the raw gas discharged by the bladed wheel after a vapor phase deposition reaction from the chamber.

摘要翻译： 气相沉积设备包括：腔室，被配置成将原料气体供应到腔室中的供应单元，设置在腔室中并构造成支撑腔室中的基底的支撑台，构造成具有多个 叶片，其被布置成围绕支撑台，并且从基板的上方排出原料气体;以及排气单元，其被配置为在来自所述室的气相沉积反应之后排出由叶轮排出的原料气体。

公开(公告)号：US20090007841A1

公开(公告)日：2009-01-08

申请号：US12166737

申请日：2008-07-02

申请人： Hironobu Hirata ,  Hideki Arai

发明人： Hironobu Hirata ,  Hideki Arai

IPC分类号： C30B23/00

CPC分类号： C30B25/12 ,  C23C16/4585 ,  C23C16/4586

摘要： A vapor-phase growing apparatus and a vapor-phase growing method which reduce sticking of a wafer to a holder during vapor-phase growth are provided. In the vapor-phase growing apparatus, a holder arranged in a chamber includes a disk-like member having a recessed portion at the center of a holder or a ring-like member having a recessed portion at a center of a holder and having an opening in a bottom center of the holder. A first projecting portion is arranged on an inner circumference wall surface of the holder, and a second projecting portion is formed on a bottom surface of the recessed portion of the holder. In this manner, the holder can support a wafer with a small contact area. In vapor-phase growth, the wafer can be prevented from sticking to the holder.

摘要翻译： 提供了一种气相生长装置和气相生长方法，其在气相生长期间减少了将晶片粘附到保持器上。 在气相生长装置中，设置在腔室中的保持器包括：在保持器的中心具有凹部的盘状构件或在保持器的中心具有凹部的环状构件，并且具有开口 在支架的底部中心。 第一突出部分布置在保持器的内周壁表面上，并且第二突出部分形成在保持器的凹部的底表面上。 以这种方式，保持器可以支撑具有小接触面积的晶片。 在气相生长中，可以防止晶片粘附到保持器上。

公开(公告)号：US20080193646A1

公开(公告)日：2008-08-14

申请号：US12030058

申请日：2008-02-12

申请人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

IPC分类号： C23C16/52

CPC分类号： C23C16/45589 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4585

摘要： A vapor phase deposition apparatus includes: a chamber, a supply unit configured to supply a raw gas into the chamber,a support table disposed in the chamber and configured to support a substrate in the chamber, a rotatable bladed wheel configured to have a plurality of blades, to be arranged to surround the support table, and to discharge the raw gas from above the substrate, and a exhaust unit configured to exhaust the raw gas discharged by the bladed wheel after a vapor phase deposition reaction from the chamber.

摘要翻译： 气相沉积设备包括：腔室，被配置成将原料气体供应到腔室中的供应单元，设置在腔室中并构造成支撑腔室中的基底的支撑台，构造成具有多个 叶片，其被布置成围绕支撑台，并且从基板的上方排出原料气体;以及排气单元，其被配置为在来自所述室的气相沉积反应之后排出由叶轮排出的原料气体。

公开(公告)号：US08796594B2

公开(公告)日：2014-08-05

申请号：US11723028

申请日：2007-03-16

申请人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

发明人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

IPC分类号： H05B1/02 ,  H01L21/67

CPC分类号： H01L21/67103

摘要： A semiconductor manufacturing equipment is provided herein. The semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part integrated with the heater element, a first electrode electrically contacted with and fixed to the first connection part on a first surface of the first electrode, and a second electrode electrically contacted with and fixed to the second connection part on a second surface of the second electrode. The second surface is perpendicular to the direction of the first surface, and the heater element produces heat by applying a voltage between the first electrode and the second electrode.

摘要翻译： 本文提供半导体制造设备。 半导体制造设备包括：加热元件，被配置为加热晶片，第一连接部分和与加热器元件集成的第二连接部分;与第一电极的第一表面电接触并固定到第一连接部分的第一电极 以及与第二电极电连接并固定到第二连接部分的第二电极的第二表面上的第二电极。 第二表面垂直于第一表面的方向，并且加热器元件通过在第一电极和第二电极之间施加电压而产生热量。

公开(公告)号：US20070221657A1

公开(公告)日：2007-09-27

申请号：US11723028

申请日：2007-03-16

申请人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

发明人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

IPC分类号： H05B1/02

CPC分类号： H01L21/67103

摘要： Semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part which are integrated with the heater element, configured to apply voltages to the heater element, a first electrode contacted with and fixed to the first connection part on a first surface of the first electrode configured to be to apply a voltage to the first connection part, a second electrode which is contacted with and fixed to the second connection part on a second surface of the second electrode, configured to apply a voltage to the second connection part, and the second surface is perpendicular to the direction of the first surface.

摘要翻译： 半导体制造设备包括被配置为加热晶片的加热器元件，与加热器元件集成的第一连接部分和第二连接部分，其构造成向加热器元件施加电压，与第一连接接触并固定的第一电极 所述第一电极的第一表面上的部分被配置为向所述第一连接部施加电压;第二电极，所述第二电极在所述第二电极的第二表面上与所述第二连接部分接触并固定， 到第二连接部分，并且第二表面垂直于第一表面的方向。

公开(公告)号：US20070023869A1

公开(公告)日：2007-02-01

申请号：US11494649

申请日：2006-07-28

申请人： Hiroshi Furutani ,  Yoshikazu Moriyama ,  Seiichi Nakazawa ,  Kunihiko Suzuki ,  Hideki Arai ,  Satoshi Inada

发明人： Hiroshi Furutani ,  Yoshikazu Moriyama ,  Seiichi Nakazawa ,  Kunihiko Suzuki ,  Hideki Arai ,  Satoshi Inada

IPC分类号： H01L23/58

CPC分类号： C23C16/4585 ,  C30B25/12

摘要： A vapor phase deposition apparatus includes a chamber, a support table disposed in the chamber and adapted to support a substrate in the chamber, a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and a second passage connected to the chamber and adapted to discharge the gas from the chamber. The support table includes a first depressed portion and a second depressed portion formed in a bottom part of the first depressed portion, a bottom face of the second depressed portion for supporting the substrate.

摘要翻译： 气相沉积设备包括：室，设置在室中并适于在室中支撑衬底的支撑台，连接到室的第一通道，并适于向腔室供应气体以在衬底上形成膜;以及 第二通道，其连接到所述室并适于从所述室排放气体。 支撑台包括形成在第一凹部的底部中的第一凹部和第二凹部，第二凹部的底面用于支撑基板。

公开(公告)号：US06461428B2

公开(公告)日：2002-10-08

申请号：US09729669

申请日：2000-12-05

申请人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

发明人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

IPC分类号： C30B2514

CPC分类号： C23C16/45587 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  C30B25/12 ,  C30B25/16 ,  C30B31/14 ,  C30B31/18

摘要： A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.

摘要翻译： 控制半导体基板的温度的方法，即使在具有不同温度上升/下降特性的半导体的半导体衬底的事件中，也可以将半导体衬底的各个半导体衬底进行氧化，扩散， 或化学气相沉积工艺。 在加热的反应器中的半导体衬底中的各个点测量温度; 其温度上升/下降特性通过计算测量值中的温度升高速率和面内温度分布来确定; 可以从预先书写的多个温度控制程序中自动选择适合于所述温度上升/下降特性的温度控制程序; 基于所选择的温度控制程序来控制半导体衬底。 还提供了一种感受器，用于在半导体衬底上形成薄膜时减少含有气体流的金属杂质的半导体衬底的污染，以及使用这种感受体的气相薄膜生长装置。 基座形成有从基座的相反侧的周边部分向下突出的气流导流器，以使沿基座的相反侧旋转的气流从其中心偏转到其周边部分。

公开(公告)号：US06537924B2

公开(公告)日：2003-03-25

申请号：US09921893

申请日：2001-08-06

申请人： Shuji Tobashi ,  Tadashi Ohashi ,  Shinichi Mitani ,  Hideki Arai ,  Hidenori Takahashi

发明人： Shuji Tobashi ,  Tadashi Ohashi ,  Shinichi Mitani ,  Hideki Arai ,  Hidenori Takahashi

IPC分类号： H01L2131

CPC分类号： C30B29/06 ,  C23C16/24 ,  C23C16/4584 ,  C30B25/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

公开(公告)号：US06485573B2

公开(公告)日：2002-11-26

申请号：US09855654

申请日：2001-05-16

申请人： Katsuyuki Iwata ,  Tadashi Ohashi ,  Shyuji Tobashi ,  Shinichi Mitani ,  Hideki Arai ,  Hideki Ito

发明人： Katsuyuki Iwata ,  Tadashi Ohashi ,  Shyuji Tobashi ,  Shinichi Mitani ,  Hideki Arai ,  Hideki Ito

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/12 ,  C30B25/14

摘要： An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe 6 for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe 7 for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve 41 provided in the purging gas exhaust pipe, a pressure gauge 21 for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit 31 for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve 41 provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.

摘要翻译： 一种通过抑制构成旋转机械部分的机器部件上的污染并通过将旋转机械部分中的压力维持在特定范围内来抑制半导体晶片上的污染物的减压气相外延生长装置，以及控制方法 上述装置。 该装置包括用于清洗旋转机械部分内部的净化气体引入管6，用于排出通过吹扫气体导入管引入的气体的净化气体排出管7，设置在净化气体排出管中的压力调节阀41， 用于检测旋转机械部分中的压力的​​压力计21以及用于基于检测到的压力执行算术运算并且用于控制设置在净化气体排出管中的压力调节阀41的开度的运算/控制单元31 ，使得旋转机械部分中的压力呈现适当的值。