发明申请
- 专利标题： Method for forming recesses
- 专利标题（中）： 凹槽形成方法
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申请号： US11195294申请日： 2005-08-02
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公开(公告)号： US20070032038A1公开(公告)日： 2007-02-08
- 发明人: Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
- 申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
- 申请人地址： TW TAOYUAN
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW TAOYUAN
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer using a first implanting mask adjacent to the first side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess.
公开/授权文献
- US07316978B2 Method for forming recesses 公开/授权日：2008-01-08
信息查询
IPC分类:
