公开(公告)号：US20070190712A1

公开(公告)日：2007-08-16

申请号：US11521639

申请日：2006-09-14

申请人： Shian-Jyh Lin ,  Chien-Li Cheng ,  Chung-Yuan Lee ,  Jeng-Ping Lin ,  Pei-Ing Lee

发明人： Shian-Jyh Lin ,  Chien-Li Cheng ,  Chung-Yuan Lee ,  Jeng-Ping Lin ,  Pei-Ing Lee

IPC分类号： H01L21/8234

CPC分类号： H01L29/42376 ,  H01L29/66621

摘要： A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a trench having a sidewall and a bottom using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the trench to form a doped region. The semiconductor substrate underlying the trench is etched to form an extended portion. A gate insulating layer is formed on the trench and the extended portion. A trench gate is formed in the trench and the extended portion.

摘要翻译： 提供一种制造具有沟槽栅极的半导体器件的方法。 首先，提供其上具有沟槽蚀刻掩模的半导体衬底。 使用沟槽蚀刻掩模作为屏蔽，蚀刻半导体衬底以形成具有侧壁和底部的沟槽。 杂质通过沟槽掺杂到半导体衬底中以形成掺杂区域。 蚀刻沟槽下方的半导体衬底以形成延伸部分。 在沟槽和延伸部分上形成栅极绝缘层。 在沟槽和延伸部分中形成沟槽栅极。

公开(公告)号：US20080009112A1

公开(公告)日：2008-01-10

申请号：US11858703

申请日：2007-09-20

申请人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

发明人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

IPC分类号： H01L21/8242

CPC分类号： H01L29/66621 ,  H01L27/10823 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10876

摘要： A method for forming a semiconductor memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor is formed in each trench. A protrusion is formed on each deep trench capacitor, wherein a top surface level of each protrusion is higher than that of the pad layer. Spacers are formed on sidewalls of the protrusions, and the pad layer and the substrate are etched using the spacers and the protrusions as a mask to form a recess. A recessed gate is formed in the recess.

摘要翻译： 公开了一种用于形成具有凹入栅极的半导体存储器件的方法。 提供其上具有垫层的衬底。 图案化衬垫层和衬底以形成至少两个沟槽。 在每个沟槽中形成深沟槽电容器。 在每个深沟槽电容器上形成突起，其中每个突起的顶表面水平高于焊盘层的顶表面高度。 间隔件形成在突起的侧壁上，并且使用间隔件和突起作为掩模来蚀刻衬垫层和衬底以形成凹部。 在凹部中形成凹槽。

公开(公告)号：US07592233B2

公开(公告)日：2009-09-22

申请号：US11858703

申请日：2007-09-20

申请人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

发明人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

IPC分类号： H01L21/8242

CPC分类号： H01L29/66621 ,  H01L27/10823 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10876

摘要： A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor is formed in each trench. A protrusion is formed on each deep trench capacitor, wherein a top surface level of each protrusion is higher than that of the pad layer. Spacers are formed on sidewalls of the protrusions, and the pad layer and the substrate are etched using the spacers and the protrusions as a mask to form a recess. A recessed gate is formed in the recess.

摘要翻译： 公开了一种用于形成具有凹入栅极的存储器件的方法。 提供其上具有垫层的衬底。 图案化衬垫层和衬底以形成至少两个沟槽。 在每个沟槽中形成深沟槽电容器。 在每个深沟槽电容器上形成突起，其中每个突起的顶表面水平高于焊盘层的顶表面高度。 间隔件形成在突起的侧壁上，并且使用间隔件和突起作为掩模来蚀刻衬垫层和衬底以形成凹部。 在凹部中形成凹槽。

公开(公告)号：US07446355B2

公开(公告)日：2008-11-04

申请号：US11556170

申请日：2006-11-03

申请人： Shian-Jyh Lin ,  Chien-Li Cheng ,  Pei-Ing Lee ,  Chung-Yuan Lee

发明人： Shian-Jyh Lin ,  Chien-Li Cheng ,  Pei-Ing Lee ,  Chung-Yuan Lee

IPC分类号： H01L29/76

CPC分类号： H01L29/66553 ,  H01L21/26586 ,  H01L27/10876 ,  H01L29/66621 ,  H01L29/66659

摘要： A method of fabricating self-aligned recess utilizing asymmetric poly spacer is disclosed. A semiconductor substrate having thereon a first pad layer and second pad layer is provided. A plurality of trenches is embedded in a memory array region of the semiconductor substrate. Each of the trenches includes a trench top layer that extrudes from a main surface of the semiconductor substrate. Asymmetric poly spacer is formed on one side of the extruding trench top layer and is used, after oxidized, as a mask for forming a recess in close proximity to the trenches.

摘要翻译： 公开了一种使用不对称聚合间隔物制造自对准凹槽的方法。 提供了其上具有第一焊盘层和第二焊盘层的半导体衬底。 多个沟槽嵌入在半导体衬底的存储器阵列区域中。 每个沟槽包括从半导体衬底的主表面挤出的沟槽顶层。 非对称聚合物间隔物形成在挤出沟槽顶层的一侧上，并且在氧化之后用作用于在靠近沟槽形成凹部的掩模。

公开(公告)号：US07795090B2

公开(公告)日：2010-09-14

申请号：US12211815

申请日：2008-09-17

申请人： Shian-Jyh Lin ,  Chien-Li Cheng ,  Pei-Ing Lee ,  Chung-Yuan Lee

发明人： Shian-Jyh Lin ,  Chien-Li Cheng ,  Pei-Ing Lee ,  Chung-Yuan Lee

IPC分类号： H01L21/8242

CPC分类号： H01L29/66553 ,  H01L21/26586 ,  H01L27/10876 ,  H01L29/66621 ,  H01L29/66659

摘要： A method of fabricating self-aligned recess utilizing asymmetric poly spacer is disclosed. A semiconductor substrate having thereon a first pad layer and second pad layer is provided. A plurality of trenches is embedded in a memory array region of the semiconductor substrate. Each of the trenches includes a trench top layer that extrudes from a main surface of the semiconductor substrate. Asymmetric poly spacer is formed on one side of the extruding trench top layer and is used, after oxidized, as a mask for forming a recess in close proximity to the trenches.

摘要翻译： 公开了一种使用不对称聚合间隔物制造自对准凹槽的方法。 提供了其上具有第一焊盘层和第二焊盘层的半导体衬底。 多个沟槽嵌入在半导体衬底的存储器阵列区域中。 每个沟槽包括从半导体衬底的主表面挤出的沟槽顶层。 非对称聚合物间隔物形成在挤出沟槽顶层的一侧上，并且在氧化之后用作用于在靠近沟槽形成凹部的掩模。

公开(公告)号：US07563686B2

公开(公告)日：2009-07-21

申请号：US11140889

申请日：2005-05-31

申请人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

发明人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

IPC分类号： H01L21/20

CPC分类号： H01L29/66621 ,  H01L27/10823 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10876

摘要： A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor device is formed in each trench. The pad layer is recessed until upper portions of the deep trench capacitor devices are revealed. Spacers are formed on sidewalls of the upper portions of the deep trench capacitor devices. The pad layer and the substrate are etched using the spacers and the deep trench capacitor devices as a mask to form a recess, and a recessed gate is formed in the recess.

摘要翻译： 公开了一种用于形成具有凹入栅极的存储器件的方法。 提供其上具有垫层的衬底。 图案化衬垫层和衬底以形成至少两个沟槽。 在每个沟槽中形成深沟槽电容器器件。 衬垫层凹进直到深沟槽电容器器件的上部露出。 间隔件形成在深沟槽电容器器件的上部的侧壁上。 使用间隔物和深沟槽电容器器件作为掩模来蚀刻焊盘层和衬底以形成凹部，并且在凹部中形成凹入栅极。

公开(公告)号：US20070032085A1

公开(公告)日：2007-02-08

申请号：US11195293

申请日：2005-08-02

申请人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

发明人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/3086 ,  H01L21/26586 ,  H01L27/10823 ,  H01L27/10829 ,  H01L27/10876 ,  H01L29/66621 ,  Y10S438/944 ,  Y10S438/947

摘要： A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer with a first angle using a first implanting mask adjacent to the first side wall of the protrusions, tilt implanting the mask layer with a second angle using a second implanting mask adjacent to the second side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess, wherein distances from the recess to the two protrusions, respectively, are different.

摘要翻译： 一种形成凹部的方法。 该方法包括提供具有两个突出物的两个突起，所述两个突起具有第一侧壁和与设置在基底上方的第一侧壁相对的第二侧壁，在基底上共形成掩模层和突起，倾斜地将掩模层以第一 使用与突起的第一侧壁相邻的第一注入掩模的角度，使用与突起的第二侧壁相邻的第二注入掩模以第二角度注入掩模层，去除掩模层的植入部分以形成 图案化掩模层，并使用图案化掩模层蚀刻基板，从而形成凹部，其中分别从凹部到两个突起的距离不同。

公开(公告)号：US20070032038A1

公开(公告)日：2007-02-08

申请号：US11195294

申请日：2005-08-02

申请人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

发明人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

IPC分类号： H01L21/76

CPC分类号： H01L21/3086 ,  H01L21/26586 ,  H01L27/10823 ,  H01L27/10829 ,  H01L27/10876 ,  H01L29/66621 ,  Y10S438/944 ,  Y10S438/947

摘要： A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer using a first implanting mask adjacent to the first side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess.

摘要翻译： 一种形成凹部的方法。 该方法包括提供具有两个突起的基底，该突起具有第一侧壁和与设置在基底上方的第一侧壁相对的第二侧壁，在基底上保形地形成掩模层和突起，使用第一 将掩模与所述突起的第一侧壁相邻地植入，去除所述掩模层的注入部分以形成图案化掩模层，并且使用所述图案化掩模层蚀刻所述衬底，从而形成凹部。

公开(公告)号：US20090011569A1

公开(公告)日：2009-01-08

申请号：US12211815

申请日：2008-09-17

申请人： Shian-Jyh Lin ,  Chien-Li Cheng ,  Pei-Ing Lee ,  Chung-Yuan Lee

发明人： Shian-Jyh Lin ,  Chien-Li Cheng ,  Pei-Ing Lee ,  Chung-Yuan Lee

IPC分类号： H01L21/76

CPC分类号： H01L29/66553 ,  H01L21/26586 ,  H01L27/10876 ,  H01L29/66621 ,  H01L29/66659

摘要： A method of fabricating self-aligned recess utilizing asymmetric poly spacer is disclosed. A semiconductor substrate having thereon a first pad layer and second pad layer is provided. A plurality of trenches is embedded in a memory array region of the semiconductor substrate. Each of the trenches includes a trench top layer that extrudes from a main surface of the semiconductor substrate. Asymmetric poly spacer is formed on one side of the extruding trench top layer and is used, after oxidized, as a mask for forming a recess in close proximity to the trenches.

摘要翻译： 公开了一种使用不对称聚合间隔物制造自对准凹槽的方法。 提供了其上具有第一焊盘层和第二焊盘层的半导体衬底。 多个沟槽嵌入在半导体衬底的存储器阵列区域中。 每个沟槽包括从半导体衬底的主表面挤出的沟槽顶层。 非对称聚合物间隔物形成在挤出沟槽顶层的一侧上，并且在氧化之后用作用于在靠近沟槽形成凹部的掩模。

公开(公告)号：US07316978B2

公开(公告)日：2008-01-08

申请号：US11195294

申请日：2005-08-02

申请人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

发明人： Pei-Ing Lee ,  Chung-Yuan Lee ,  Chien-Li Cheng

IPC分类号： H01L21/311

CPC分类号： H01L21/3086 ,  H01L21/26586 ,  H01L27/10823 ,  H01L27/10829 ,  H01L27/10876 ,  H01L29/66621 ,  Y10S438/944 ,  Y10S438/947

摘要： A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer using a first implanting mask adjacent to the first side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess.

摘要翻译： 一种形成凹部的方法。 该方法包括提供具有两个突起的基底，该突起具有第一侧壁和与设置在基底上方的第一侧壁相对的第二侧壁，在基底上保形地形成掩模层和突起，使用第一 将掩模与所述突起的第一侧壁相邻地植入，去除所述掩模层的注入部分以形成图案化掩模层，并且使用所述图案化掩模层蚀刻所述衬底，从而形成凹部。